Power MOSFET. NVMD6N03R2 Datasheet


NVMD6N03R2 MOSFET. Datasheet pdf. Equivalent


Part Number

NVMD6N03R2

Description

Power MOSFET

Manufacture

ON Semiconductor

Total Page 9 Pages
Datasheet
Download NVMD6N03R2 Datasheet


NVMD6N03R2
NTMD6N03R2,
NVMD6N03R2
MOSFET – Power, Dual,
N-Channel, SOIC-8
30 V, 6 A
Features
Designed for use in low voltage, high speed switching applications
Ultra Low OnResistance Provides
Higher Efficiency and Extends Battery Life
RDS(on) = 0.024 W, VGS = 10 V (Typ)
RDS(on) = 0.030 W, VGS = 4.5 V (Typ)
Miniature SOIC8 Surface Mount Package Saves Board Space
Diode is Characterized for Use in Bridge Circuits
Diode Exhibits High Speed, with Soft Recovery
AEC Q101 Qualified NVMD6N03R2
These Devices are PbFree and are RoHS Compliant
Applications
DCDC Converters
Computers
Printers
Cellular and Cordless Phones
Disk Drives and Tape Drives
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
DraintoSource Voltage
GatetoSource Voltage Continuous
Drain Current
Continuous @ TA = 25°C
Single Pulse (tp 10 ms)
Total Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
Operating and Storage Temperature
Range
VDSS
VGS
ID
IDM
PD
TJ, Tstg
30
"20
6.0
30
2.0
1.29
55 to
+150
Unit
Volts
Volts
Adc
Apk
Watts
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 5.0 Vdc,
VDS = 20 Vdc, Peak IL = 9.0 Apk,
L = 10 mH, RG = 25 W)
Thermal Resistance
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
EAS
RqJA
325 mJ
°C/W
62.5
97
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2011
May, 2019 Rev. 3
1
http://onsemi.com
VDSS
30 V
RDS(ON) Typ
24 mW @ VGS = 10 V
ID Max
6.0 A
NChannel
D
D
GG
SS
8
1
SOIC8
CASE 751
STYLE 11
MARKING DIAGRAM &
PIN ASSIGNMENT
D1 D1 D2 D2
8
E6N03
AYWW G
G
1
S1 G1 S2 G2
E6N03 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTMD6N03R2G
SOIC8
(PbFree)
2500 / Tape &
Reel
NVMD6N03R2G SOIC8
(PbFree)
2500 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTMD6N03R2/D

NVMD6N03R2
NTMD6N03R2, NVMD6N03R2
1. When surface mounted to an FR4 board using 1pad size, t 10 s
2. When surface mounted to an FR4 board using 1pad size, t = steady state
http://onsemi.com
2


Features NTMD6N03R2, NVMD6N03R2 MOSFET – Power , Dual, N-Channel, SOIC-8 30 V, 6 A Fe atures • Designed for use in low volt age, high speed switching applications • Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery L ife − RDS(on) = 0.024 W, VGS = 10 V ( Typ) − RDS(on) = 0.030 W, VGS = 4.5 V (Typ) • Miniature SOIC−8 Surface M ount Package Saves Board Space • Diod e is Characterized for Use in Bridge Ci rcuits • Diode Exhibits High Speed, w ith Soft Recovery • AEC Q101 Qualifie d − NVMD6N03R2 • These Devices are Pb−Free and are RoHS Compliant Applic ations • DC−DC Converters • Compu ters • Printers • Cellular and Cord less Phones • Disk Drives and Tape Dr ives MAXIMUM RATINGS (TJ = 25°C unles s otherwise noted) Rating Symbol Valu e Drain−to−Source Voltage Gate−t o−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C Single Pulse (tp ≤ 10 ms) Total Pow er Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) Operating and Storage Temperature Range VDSS VGS ID IDM PD TJ, .
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