IRGS4055PBF Trench IGBT Datasheet

IRGS4055PBF Datasheet, PDF, Equivalent


Part Number

IRGS4055PBF

Description

PDP Trench IGBT

Manufacture

International Rectifier

Total Page 9 Pages
Datasheet
Download IRGS4055PBF Datasheet


IRGS4055PBF
PD - 97058B
PDP TRENCH IGBT IRGB4055PbF
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
circuits in PDP applications
l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
l High repetitive peak current capability
l Lead Free package
IRGS4055PbF
Key Parameters
VCE min
300
cV CE(ON) typ. @ 110A
IRP ma x @ T C= 25° C
TJ ma x
1.70
270
150
V
V
A
°C
C CC
G
E
n-channel
GCE
TO-220
IRGB4055DPbF
GCE
D2Pak
IRGS4055DPbF
G
Gate
C
Collector
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes
advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area
which improve panel efficiency. Additional features are 150°C operating junction temperature and high
repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust
and reliable device for PDP applications.
Absolute Maximum Ratings
Parameter
VGE
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
cRepetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
dJunction-to-Case
Case-to-Sink, Flat Greased Surface , TO-220
dJunction-to-Ambient, TO-220
dJunction-to-Ambient (PCB Mount) , D2Pak
www.irf.com
Max.
±30
f110
60
270
255
102
2.04
-40 to + 150
300
x x10lb in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
Units
V
A
W
W/°C
°C
N
Units
°C/W
1
http://www.Datasheet4U.com
03/16/07

IRGS4055PBF
IRGB/S4055PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVCES
∆ΒVCES/TJ
VCE(on)
Collector-to-Emitter Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Collector-to-Emitter Voltage
300
–––
–––
–––
–––
–––
–––
0.23
1.10
1.70
2.35
1.95
–––
–––
1.30
2.10
–––
–––
V
V/°C
V
V
V
V
VGE = 0V, ICE = 1 mA
eReference to 25°C, ICE = 1mA
VGE = 15V, ICE = 35A
eVGE = 15V, ICE = 110A
eVGE = 15V, ICE = 200A
VGE = 15V, ICE = 110A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
2.6 ––– 5.0
V VCE = VGE, ICE = 1mA
VGE(th)/TJ
ICES
IGES
gfe
Qg
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
––– -11 ––– mV/°C
––– 2.0 25 µA VCE = 300V, VGE = 0V
––– 100 –––
VCE = 300V, VGE = 0V, TJ = 150°C
––– ––– 100 nA VGE = 30V
––– ––– -100
VGE = -30V
––– 38 –––
––– 132 –––
S VCE = 25V, ICE = 35A
enC VCE = 200V, IC = 35A, VGE = 15V
––– 42 –––
— 44 57
IC = 35A, VCC = 180V
— 39 55 ns RG = 10, L=250µH, LS= 150nH
— 245 308
TJ = 25°C
— 152 198
— 42 —
— 40 —
— 362 —
— 309 —
IC = 35A, VCC = 180V
ns RG = 10, L=250µH, LS= 150nH
TJ = 150°C
tst
EPULSE
Ciss
Coss
Crss
LC
Shoot Through Blocking Time
Energy per Pulse
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Collector Inductance
100 ––– –––
––– 705 –––
––– 915 –––
––– 4280 –––
––– 200 –––
––– 125 –––
––– 5.0 –––
ns VCC = 240V, VGE = 15V, RG= 5.1
L = 220nH, C= 0.40µF, VGE = 15V
µJ VCC = 240V, RG= 5.1Ω, TJ = 25°C
L = 220nH, C= 0.40µF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 100°C
VGE = 0V
pF VCE = 30V
ƒ = 1.0MHz,
See Fig.13
Between lead,
nH 6mm (0.25in.)
LE Internal Emitter Inductance
––– 13 –––
from package
and center of die contact
Notes:
 Half sine wave with duty cycle = 0.25, ton=1µsec.
‚ Rθ is measured at TJ of approximately 90°C.
ƒ Pulse width 400µs; duty cycle 2%.
„ Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 70A.
2
www.irf.com


Features PD - 97058B PDP TRENCH IGBT Features Ad vanced Trench IGBT Technology l Optimiz ed for Sustain and Energy Recovery circ uits in PDP applications TM) l Low VCE( on) and Energy per Pulse (E PULSE for i mproved panel efficiency l High repetit ive peak current capability l Lead Free package l IRGB4055PbF IRGS4055PbF K e y Param eters 300 1.70 270 150 V V A ° C V CE m in V CE (O N) typ. @ 110A I R P ma x @ T C = 25° C T J ma x c C C C G E E C G E C G D2Pak IRGS4055DPb F n-channel TO-220 IRGB4055DPbF G Ga te C Collector E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench I GBT technology to achieve low VCE(on) a nd low EPULSETM rating per silicon area which improve panel efficiency. Additi onal features are 150°C operating junc tion temperature and high repetitive pe ak current capability. These features c ombine to make this IGBT a highly effic ient, robust and reliable device for PDP applications. Absolute M.
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