D862 2SD862 Datasheet

D862 Datasheet, PDF, Equivalent


Part Number

D862

Description

2SD862

Manufacture

Wing Shing Computer Components

Total Page 1 Pages
Datasheet
Download D862 Datasheet


D862
2SD862
Silicon Epitaxial Planar Transistor
GENERAL DESCRIPTION
Silicon NPN high frequency, Low Vce(sat) middle
power transistors in a plastic envelope, primarily for
use in audio and general purpose
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
VF
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Diode forward voltage
Fall time
LIMITING VALUES
SYMBOL
VCESM
VCEO
VEBO
IC
IB
Ptot
Tstg
Tj
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base oltage (open colloctor)
Collector current (DC)
Base current (DC)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
VBE = 0V
TO-126
Tmb 25
IC = 1.5A; IB = 0.15A
IF = 1.5A
CONDITIONS
VBE = 0V
Tmb 25
ELECTRICAL CHARACTERISTICS
SYMBOL
ICBO
IEBO
V(BR)CEO
VCEsat
hFE
fT
Cc
ton
ts
tf
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
DC current gain
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
On times
Tum-off storage time
Fall time
CONDITIONS
VCB=20V
VEB=5V
IC=1mA
IC = 1.5A; IB = 0.15A
IC = 100mA; VCE = 2V
IC = 0.5A; VCE = 12V
VCB = 10V
TYP MAX UNIT
- 20 V
- 20 V
- 2A
-A
- 10 W
- 0.5 V
1.5 2.0
V
-s
MIN MAX UNIT
- 20 V
- 20 V
6V
- 2A
- 0.5 A
- 10 W
-55 150
- 150
TYP MAX UNIT
- 0.1 mA
- 0.2 mA
20 V
- 0.5 V
60 400
80 - MHz
75 - pF
us
us
us
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com


Features 2SD862 GENERAL DESCRIPTION Silicon Epit axial Planar Transistor Silicon NPN hi gh frequency, Low Vce(sat) middle power transistors in a plastic envelope, pri marily for use in audio and general pur pose QUICK REFERENCE DATA SYMBOL TO-1 26 CONDITIONS VBE = 0V TYP VCESM VCEO IC ICM Ptot VCEsat VF tf PARAMETER Col lector-emitter voltage peak value Colle ctor-emitter voltage (open base) Collec tor current (DC) Collector current peak value Total power dissipation Collecto r-emitter saturation voltage Diode forw ard voltage Fall time Tmb 25 IC = 1.5A ; IB = 0.15A IF = 1.5A 1.5 MAX 20 20 2 10 0.5 2.0 - UNIT V V A A W V V s L IMITING VALUES SYMBOL VCESM VCEO VEBO IC IB Ptot Tstg Tj PARAMETER Collector -emitter voltage peak value Collector-e mitter voltage (open base) Emitter-base oltage (open colloctor) Collector curr ent (DC) Base current (DC) Total power dissipation Storage temperature Junctio n temperature CONDITIONS VBE = 0V MIN -55 - Tmb 25 MAX 20 20 6 2 0.5 10 150 150 UNIT V V V A A W .
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