AP25N10J-HF POWER MOSFET Datasheet

AP25N10J-HF Datasheet, PDF, Equivalent


Part Number

AP25N10J-HF

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacture

Advanced Power Electronics

Total Page 5 Pages
Datasheet
Download AP25N10J-HF Datasheet


AP25N10J-HF
Advanced Power
Electronics Corp.
AP25N10GH/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low Gate Charge
Single Drive Requirement
RoHS Compliant & Halogen-Free
G
D
S
BVDSS
RDS(ON)
ID
100V
80mΩ
23A
Description
AP25N10 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for high current application due to the low connection resistance. The
through-hole version (AP25N10GJ) are available for low-profile
applications.
G
D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
100
+20
23
14.6
80
96
-55 to 150
-55 to 150
V
V
A
A
A
W
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
1.3
62.5
110
Units
/W
/W
/W
1
201410214

AP25N10J-HF
AP25N10GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage VGS=0V, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=16A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=16A
Drain-Source Leakage Current
VDS=80V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=80V, VGS=0V
Gate-Source Leakage
VGS=+20V, VDS=0V
Total Gate Charge
ID=16A
Gate-Source Charge
VDS=80V
Gate-Drain ("Miller") Charge
VGS=10V
Turn-on Delay Time
VDD=50V
Rise Time
ID=16A
Turn-off Delay Time
RG=3.3Ω
Fall Time
VGS=10V
Input Capacitance
VGS=0V
Output Capacitance
Reverse Transfer Capacitance
.VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
100 - - V
- - 80 m
2 - 4V
- 14 -
S
- - 25 uA
- - 250 uA
- - +100 nA
- 19 30 nC
- 5 - nC
- 6 - nC
- 10 - ns
- 28 - ns
- 17 - ns
- 2 - ns
- 1060 1700 pF
- 270 - pF
- 8 - pF
- 1.5 3 Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=16A, VGS=0V
IS=16A, VGS=0V
dI/dt=100A/µs
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
Min. Typ. Max. Units
- - 1.3 V
- 90 - ns
- 380 - nC
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2


Features AP25N10GH/J-HF Halogen-Free Product Adv anced Power Electronics Corp. ▼ Low G ate Charge ▼ Single Drive Requirement ▼ RoHS Compliant & Halogen-Free G N -CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 100V 80mΩ 23A S Description Advanced Power MOSFETs fro m APEC provide the designer with the be st combination of fast switching, rugge dized device design, low on-resistance and costeffectiveness. The TO-252 packa ge is widely preferred for all commerci al-industrial surface mount application s and suited for low voltage applicatio ns such as DC/DC converters. The throug h-hole version (AP25N10GJ) are availabl e for low-profile applications. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=2 5℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate- Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 100 +20 23 14.6 80 96 0.77 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ .
Keywords AP25N10J-HF, datasheet, pdf, Advanced Power Electronics, N-CHANNEL, ENHANCEMENT, MODE, POWER, MOSFET, P25N10J-HF, 25N10J-HF, 5N10J-HF, AP25N10J-H, AP25N10J-, AP25N10J, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)