Barrier Diode. FMEN-2208 Datasheet


FMEN-2208 Diode. Datasheet pdf. Equivalent


FMEN-2208


Silicon Schottky Barrier Diode
SANKEN ELECTRIC CO., LTD.

FMEN-2208

1 Scope The present specifications shall apply to FMEN-2208. 2 Outline Type Structure Applications Silicon Schottky Barrier Diode Resin Molded High Frequency Rectification

3 Flammability UL94V-0(Equivalent) 4 Absolute maximum ratings No. 1 2 3 4 5 6 7 Item Transient Peak Reverse Voltage Peak Reverse Voltage Average Forward Current Peak Surge Forward Current I2t Limiting Value Junction Temperature Storage Temperature Symbol VRSM VRM IF(AV) IFSM I2 t Tj Tstg Unit V V A A A2s °C °C Rating 85 80 20 120 72 -40 to +150 -40 to +150 *1 No.1, 2, 4 and 5 show ratings per one chip.
VRSM VRM

Conditions PT ≤ 500 ns Duty ≤ 1/40 *1

Refer to derating curve in Section 7 10 ms. Half sine wave, one shot 1 ms ≤ t ≤ 10 ms

PT T

5 Electrical characteristics (Ta=25°C, unless otherwise specified) No. 1 2 3 4 Item Forward Voltage Drop Reverse Leakage Current Reverse Leakage Current Under High Temperature Thermal Resistance Symbol VF IR H・IR Rth(j-c) Unit V uA mA °C /W
Value

Conditions IF=10A VR=VRM VR=VRM, Tj=150°C
Between Junction and case

0.76 max. 200 max. 100 max. 4.0 max.

No.1, 2 and 3 show characteristics per one chip. 071227 1/ 4
http://www.Datasheet4U.com

61426-01

SANKEN ELECTRIC CO., LTD. 6 Characteristics

FMEN-2208

IF(AV) - PF
20

Tj=150°C
t T

Forward Power Dissipation, PF (W)

t/T=1/6

t/T=1/3,sinewave

10
t/T=1/2 DC

0 0 10 Average Forward C...



FMEN-2208
SANKEN ELECTRIC CO., LTD.
Scope
The present specifications shall apply to FMEN-2208.
Outline
Type Silicon Schottky Barrier Diode
Structure
Resin Molded
Applications
High Frequency Rectification
FMEN-2208
Flammability
UL94V-0(Equivalent)
Absolute maximum ratings
No. Item
Symbol Unit
1 Transient Peak Reverse Voltage VRSM
2 Peak Reverse Voltage
VRM
3 Average Forward Current
IF(AV)
4 Peak Surge Forward Current
5 I2t Limiting Value
IFSM
I2t
V
V
A
A
A2s
6 Junction Temperature
7 Storage Temperature
Tj °C
Tstg °C
No.1, 2, 4 and 5 show ratings per one chip.
Rating
85
80
20
120
72
Conditions
PT 500 ns
Duty 1/40 *1
Refer to derating curve
in Section 7
10 ms.
Half sine wave, one shot
1 ms t 10 ms
-40 to +150
-40 to +150
*1 VRSM
VRM
Electrical characteristics (Ta=25°C, unless otherwise specified)
No.
Item
Symbol Unit
Value
1 Forward Voltage Drop
VF V
2 Reverse Leakage Current
IR uA
3
Reverse Leakage Current Under
High Temperature
HIR
mA
4 Thermal Resistance
Rth(j-c) °C /W
No.1, 2 and 3 show characteristics per one chip.
0.76 max.
200 max.
100 max.
4.0 max.
071227
PT
T
Conditions
IF=10A
VR=VRM
VR=VRM, Tj=150°C
Between Junction and case
14
http://www.Datasheet4U.com
61426-01

FMEN-2208
SANKEN ELECTRIC CO., LTD.
Characteristics
20
Tj=150°C
t
T
IF(AV) PF
t/T=1/6
t/T=1/3,sinewave
10
t/T=1/2
DC
0
0 10
Average Forward Current, IF(AV) (A)
FMEN-2208
20
20
Tj=150°C
t
T
10
VR PR
1-t/T=5/6
1-t/T=2/3
1-t/T=1/2
0
0 20 40 60
Reverse Voltage, VR (V)
sinewave
80
071227
24
61426-01




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