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Power Output. NTE341 Datasheet

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Power Output. NTE341 Datasheet






NTE341 Output. Datasheet pdf. Equivalent




NTE341 Output. Datasheet pdf. Equivalent





Part

NTE341

Description

Silicon NPN Transistor RF Power Output



Feature


NTE341 Silicon NPN Transistor RF Power O utput PD Electrical Characteristics: (TC = +25°C unless otherwise specified ) Parameter Symbol Test Conditions Min 18 36 4 − 10 4 12 − Typ − − − − − − − 180 Max Unit − − 250 100 − − 230 W dB pF http://w ww.Datasheet4U.com OFF Characteristics Collector−Emitter Breakdown Voltage Emitter−Base Breakdown Voltage Collector Cutoff .
Manufacture

NTE

Datasheet
Download NTE341 Datasheet


NTE NTE341

NTE341; Current ON Characteristics DC Current Ga in Dynamic Characteristics Output Power Common−Emitter Amplifier Power Gain Output Capacitance F w C ww Absolute Maximum Ratings: (TC = +25°C unless o therwise specified) Collector−Base Vo ltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Collector−Emit.


NTE NTE341

ter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Collector−Emitter Voltage , VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 V Emitter−Base Voltage, VEBO 4V ..... ....................................... ............. Collecto.


NTE NTE341

r Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640mA Total Device Di ssipation, Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8W Operating Junction Temp erature, Tj . . . . . . . . . . . . . . . . . . . . . . ..

Part

NTE341

Description

Silicon NPN Transistor RF Power Output



Feature


NTE341 Silicon NPN Transistor RF Power O utput PD Electrical Characteristics: (TC = +25°C unless otherwise specified ) Parameter Symbol Test Conditions Min 18 36 4 − 10 4 12 − Typ − − − − − − − 180 Max Unit − − 250 100 − − 230 W dB pF http://w ww.Datasheet4U.com OFF Characteristics Collector−Emitter Breakdown Voltage Emitter−Base Breakdown Voltage Collector Cutoff .
Manufacture

NTE

Datasheet
Download NTE341 Datasheet




 NTE341
NTE341
Silicon NPN Transistor
RF Power Output
Description:
The NTE341 is a epitaxial silicon NPN transistor designed primarily for VHF mobile communications.
The chip of this transistor is mounted so as to isolate the collector lead and ground the emitter lead
for high gain performance.
Features:
D 175MHz
D 12.5 Volts
D POUT = 4W Minimum
D GP = 12dB
D Grounded Emitter
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
CollectorEmitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640mA
Total Device Dissipation, Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8W
Operating Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperatures Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +200°C
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21.9°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorEmitter Breakdown Voltage
EmitterBase Breakdown Voltage
Collector Cutoff Current
ON Characteristics
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
IC = 10mA, IB = 0
IC = 5mA, VBE = 0
IC = 0, IE = 1mA
VCB = 15V, IE = 0
DC Current Gain
Dynamic Characteristics
hFE VCE = 5V, IC = 50mA
Output Power
CommonEmitter Amplifier Power Gain
Output Capacitance
POUT
GPE
Cob
VCE = 12.5V, f = 175MHz
VCE = 12.5V, f = 175MHz
VCE = 15V, f = 1MHz
Min Typ Max Unit
18 − − V
36 − − V
4 − −V
− − 250 µA
10 100
4 − −W
12 − − dB
180 230 pF




 NTE341
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Impedance Data
Input Impedance
Zin
PVICNC=
200mW,
= 12.6V
f = 136MHz
f = 155MHz
3.0 j3.8
4.0 j2.0
f = 175MHz
4.3 j5.8
Clamping Impedance
Zcl
f = 136MHz
12.8 j11
f = 155MHz
11 j14.8
f = 175MHz
13 j20
.260
(6.6)
Max
.500
(12.7)
Min
.370 (9.39) Dia Max
.355 (9.03) Dia Max
Collector
45°
.018 (0.45) Dia
Base
Emitter/Case
.031 (.793)







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