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Audio MOSFET. IRFI4019HG-117P Datasheet

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Audio MOSFET. IRFI4019HG-117P Datasheet






IRFI4019HG-117P MOSFET. Datasheet pdf. Equivalent




IRFI4019HG-117P MOSFET. Datasheet pdf. Equivalent





Part

IRFI4019HG-117P

Description

Digital Audio MOSFET



Feature


DIGITAL AUDIO MOSFET Features IRFI4019H G-117P Key Parameters 150 80 13 4.1 2.5 150 PD - 96274 Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Integrated Half-Bridge Packag e Reduces the Part Count by Half Facili tates Better PCB Layout Key Parameters Optimized for Class-D Audio Amplifier A pplications Low RDS(ON) for Improved Ef ficiency Low Qg and Qsw for Better THD and Improved Efficiency Low .
Manufacture

International Rectifier

Datasheet
Download IRFI4019HG-117P Datasheet


International Rectifier IRFI4019HG-117P

IRFI4019HG-117P; Qrr for Better THD and Lower EMI Can Del ivery up to 200W per Channel into 8Ω Load in Half-Bridge Configuration Ampli fier Lead-Free Package Halogen-Free VD S RDS(ON) typ. @ 10V Qg typ. Qsw typ. R G(int) typ. TJ max h V m: nC nC Ω C G1 S1/D2 G2 S2 D1 TO-220 Full-Pak 5 PIN G1, G2 D1, D2 S1, S2 Descriptio n Gate Drain Source This Digital Au dio MosFET Half-Bridge .


International Rectifier IRFI4019HG-117P

is specifically designed for Class D aud io amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The lates t process is used to achieve low on-res istance per silicon area. Furthermore, Gate charge, body-diode reverse recover y, and internal Gate resistance are opt imized to improve key Class D audio amp lifier performance.


International Rectifier IRFI4019HG-117P

factors such as efficiency, THD and EMI . These combine to make this Half-Bridg e a highly efficient, robust and reliab le device for Class D audio amplifier a pplications. Absolute Maximum Ratings h Parameter Max. 150 ±20 8.7 6.2 34 77 18 7.2 0.15 -55 to + 150 Units V A VDS VGS ID @ TC = 25°C ID @ TC = 100 C IDM EAS PD @TC = 25°C PD @TC = 100 C TJ TSTG Drain-to-So.

Part

IRFI4019HG-117P

Description

Digital Audio MOSFET



Feature


DIGITAL AUDIO MOSFET Features IRFI4019H G-117P Key Parameters 150 80 13 4.1 2.5 150 PD - 96274 Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Integrated Half-Bridge Packag e Reduces the Part Count by Half Facili tates Better PCB Layout Key Parameters Optimized for Class-D Audio Amplifier A pplications Low RDS(ON) for Improved Ef ficiency Low Qg and Qsw for Better THD and Improved Efficiency Low .
Manufacture

International Rectifier

Datasheet
Download IRFI4019HG-117P Datasheet




 IRFI4019HG-117P
PD - 96274
IRFI4019HG-117P
DIGITAL AUDIO MOSFET
Features
Ÿ Integrated Half-Bridge Package
Ÿ Reduces the Part Count by Half
Ÿ Facilitates Better PCB Layout
Ÿ Key Parameters Optimized for Class-D
Audio Amplifier Applications
Ÿ Low RDS(ON) for Improved Efficiency
Ÿ Low Qg and Qsw for Better THD and
Improved Efficiency
Ÿ Low Qrr for Better THD and Lower EMI
Ÿ Can Delivery up to 200W per Channel into
8Load in Half-Bridge Configuration
Amplifier
Ÿ Lead-Free Package
Ÿ Halogen-Free
hKey Parameters
VDS
RDS(ON) typ. @ 10V
Qg typ.
Qsw typ.
RG(int) typ.
TJ max
150
80
13
4.1
2.5
150
V
m:
nC
nC
°C
D1
G1
S1/D2
G2
S2
TO-220 Full-Pak 5 PIN
G1, G2
D1, D2
S1, S2
Description
Gate
Drain
Source
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connected in half-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and
internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such
as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable
device for Class D audio amplifier applications.
hAbsolute Maximum Ratings
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
EAS
PD @TC = 25°C
PD @TC = 100°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
dSingle Pulse Avalanche Energy
fPower Dissipation
fPower Dissipation
Max.
150
±20
8.7
6.2
34
77
18
7.2
Units
V
A
mJ
W
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
hThermal Resistance
0.15
-55 to + 150
300
x x10lb in (1.1N m)
W/°C
°C
Parameter
fRθJC
Junction-to-Case
fRθJA Junction-to-Ambient
Notes  through † are on page 2
www.irf.com
Typ.
–––
–––
Max.
6.9
65
Units
1
10/08/09




 IRFI4019HG-117P
IRFI4019HG-117P
hElectrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
150 ––– ––– V VGS = 0V, ID = 250µA
∆ΒVDSS/TJ
RDS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
e––– 0.19 ––– V/°C Reference to 25°C, ID = 1mA
––– 80
95 mVGS = 10V, ID = 5.2A
VGS(th)
VGS(th)/TJ
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
3.0 ––– 4.9
V VDS = VGS, ID = 50µA
––– -11 ––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 20
µA VDS = 150V, VGS = 0V
––– ––– 250
VDS = 150V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
11 ––– ––– S VDS = 50V, ID = 5.2A
Qg Total Gate Charge
––– 13 20
Qgs1
Pre-Vth Gate-to-Source Charge
––– 3.3 –––
VDS = 75V
Qgs2
Post-Vth Gate-to-Source Charge
––– 0.8 ––– nC VGS = 10V
Qgd Gate-to-Drain Charge
––– 3.9 –––
ID = 5.2A
Qgodr
Gate Charge Overdrive
––– 5.0 –––
See Fig. 6 and 19
Qsw Switch Charge (Qgs2 + Qgd)
––– 4.1 –––
RG(int)
td(on)
Internal Gate Resistance
Turn-On Delay Time
––– 2.5 –––
––– 7.0 –––
ÃeVDD = 75V, VGS = 10V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 6.6 –––
ID = 5.2A
––– 13 ––– ns RG = 2.4
tf Fall Time
––– 3.1 –––
Ciss Input Capacitance
––– 810 –––
VGS = 0V
Coss Output Capacitance
––– 100 ––– pF VDS = 25V
Crss
Reverse Transfer Capacitance
––– 15 –––
ƒ = 1.0MHz,
See Fig.5
Coss Effective Output Capacitance
––– 97 –––
VGS = 0V, VDS = 0V to 120V
LD Internal Drain Inductance
––– 4.5 –––
Between lead,
D
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
and center of die contact
S
hDiode Characteristics
Parameter
IS @ TC = 25°C Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
57
140
Max. Units
Conditions
8.7 MOSFET symbol
A showing the
34 integral reverse
p-n junction diode.
e1.3 V TJ = 25°C, IS = 5.2A, VGS = 0V
e86 ns TJ = 25°C, IF = 5.2A
210 nC di/dt = 100A/µs
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 5.8mH, RG = 25, IAS = 5.2A.
ƒ Pulse width 400µs; duty cycle 2%.
2
„ Rθ is measured at TJ of approximately 90°C.
… Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
avalanche information
† Specifications refer to single MosFET.
www.irf.com




 IRFI4019HG-117P
100
VGS
TOP
15V
12V
10V
10
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.5V
1
5.5V
0.1
0.01
0.1
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
10 TJ = 175°C
IRFI4019HG-117P
100
VGS
TOP
15V
12V
10V
9.0V
8.0V
10
7.0V
6.0V
BOTTOM 5.5V
1
5.5V
0.1
0.1
60µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.5
ID = 5.2A
VGS = 10V
2.0
1.5
1 TJ = 25°C
0.1
4
VDS = 50V
60µs PULSE WIDTH
567
VGS, Gate-to-Source Voltage (V)
8
Fig 3. Typical Transfer Characteristics
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
20
ID= 5.2A
16
12
VDS= 120V
VDS= 75V
VDS= 30V
100 Coss
Crss
10
8
4
1
1
10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
www.irf.com
0
0 5 10 15 20
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3



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