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BRIDGE RECTIFIERS. KBPC5006 Datasheet

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BRIDGE RECTIFIERS. KBPC5006 Datasheet






KBPC5006 RECTIFIERS. Datasheet pdf. Equivalent




KBPC5006 RECTIFIERS. Datasheet pdf. Equivalent





Part

KBPC5006

Description

SILICON BRIDGE RECTIFIERS



Feature


www.eicsemi.com TH97/2478 TH09/2479 I ATF 0113686 SGS TH07/1033 KBPC5000 - K BPC5010 PRV : 50 - 1000 Volts Io : 50 A mperes FEATURES : * * * * * * * High ca se dielectric strength High surge curre nt capability High reliability High eff iciency Low reverse current Low forward voltage drop Pb / RoHS Free SILICON B RIDGE RECTIFIERS BR50M 0.728(18.50) 0.6 88(17.40) 0.570 (.
Manufacture

EIC

Datasheet
Download KBPC5006 Datasheet


EIC KBPC5006

KBPC5006; 14.50) 0.530(13.40) 0.685(16.70) 0.618( 15.70) 1.130(28.70) 1.120(28.40) 0.65 8(16.70) 0.618(15.70) 0.210(5.30) 0.20 0(5.10) 0.032(0.81) 0.028(0.71) 0.256 (6.50) 0.248(6.30) φ 0.100(2.50) 0.090 (2.30) 1.011 (25.7) 0.893 (22.7) MECHA NICAL DATA : Case : Metal Case Epoxy : UL94V-0 rate flame retardant Terminals : plated .25" (6.35 mm). Faston Polarit y : Polarity symbol.


EIC KBPC5006

s marked on case Mounting position : Bol t down on heat-sink with silicone therm al compound between bridge and mounting surface for maximum heat transfer effi ciency. * Weight : 17.1 grams * * * * * 0.443 (11.25) 0.431 (10.95) Dimension s in inches and ( millimeters ) Rating at 25 °C ambient temperature unless o therwise specified. Single phase, half wave, 60 Hz, resist.


EIC KBPC5006

ive or inductive load. For capacitive lo ad, derate current by 20%. MAXIMUM RAT INGS AND ELECTRICAL CHARACTERISTICS RA TING Maximum Recurrent Peak Reverse Vol tage Maximum RMS Voltage Maximum DC Blo cking Voltage Maximum Average Forward C urrent Tc = 55°C Peak Forward Surge Cu rrent Single half sine wave Superimpose d on rated load (JEDEC Method) Current Squared Time at t <.

Part

KBPC5006

Description

SILICON BRIDGE RECTIFIERS



Feature


www.eicsemi.com TH97/2478 TH09/2479 I ATF 0113686 SGS TH07/1033 KBPC5000 - K BPC5010 PRV : 50 - 1000 Volts Io : 50 A mperes FEATURES : * * * * * * * High ca se dielectric strength High surge curre nt capability High reliability High eff iciency Low reverse current Low forward voltage drop Pb / RoHS Free SILICON B RIDGE RECTIFIERS BR50M 0.728(18.50) 0.6 88(17.40) 0.570 (.
Manufacture

EIC

Datasheet
Download KBPC5006 Datasheet




 KBPC5006
www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686
SGS TH07/1033
KBPC5000 - KBPC5010
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 50 Amperes
BR50M
0.728(18.50)
0.688(17.40)
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* High efficiency
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Metal Case
* Epoxy : UL94V-0 rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
0.570 (14.50)
0.530(13.40)
0.685(16.70)
0.618(15.70)
1.130(28.70)
1.120(28.40)
0.658(16.70)
0.618(15.70)
0.210(5.30)
0.200(5.10)
0.032(0.81)
0.028(0.71)
0.443 (11.25)
0.431 (10.95)
0.256(6.50)
0.248(6.30)
φ 0.100(2.50)
0.090(2.30)
1.011 (25.7)
0.893 (22.7)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF=25 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IF(AV)
KBPC
5000
50
35
50
IFSM
I2t
VF
IR
IR(H)
RθJC
TJ
TSTG
KBPC
5001
100
70
100
KBPC
5002
200
140
200
KBPC
5004
400
280
400
50
KBPC
5006
600
420
600
400
660
1.1
10
500
2.0
- 40 to + 150
- 40 to + 150
KBPC
5008
800
560
800
KBPC
5010
1000
700
1000
UNIT
V
V
V
A
A
A2S
V
μA
μA
°C/W
°C
°C
Note :
( 1 ) Thermal resistance from Junction to Case with units mounted on a 9"x5"x4.6" (22.9x12.7x11.7 cm) Al-Finned Heatsink.
Page 1 of 2
Rev. 02 : September 3, 2012




 KBPC5006
www.eicsemi.com
TH97/2478
TH09/2479
RATING AND CHARACTERISTIC CURVES (KBPC5000 - KBPC5010 )
IATF 0113686
SGS TH07/1033
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
60
HEAT-SINK MOUNTING, Tc
9" x 5" x 4.6" THK.
50 5 (22.9 x 12.75x 11.7c5m)
Al.-Finned .
40
30
20
10
0
0 25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
600
TJ = 50 °C
500
400
300
8.3 ms SINGLE HALF SINE WAVE
200 JEDEC METHOD
100
0
12
4 6 10 20
40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
100
10
Pulse Width = 300 µs
1 % Duty Cycle
1.0
TJ = 25 °C
0.1
0.01
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
10
TJ = 100 °C
1.0
0.1 TJ = 25 °C
0.01
0
20 40
60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 02 : September 3, 2012







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