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AOTF9N70. TF9N70 Datasheet

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AOTF9N70. TF9N70 Datasheet






TF9N70 AOTF9N70. Datasheet pdf. Equivalent




TF9N70 AOTF9N70. Datasheet pdf. Equivalent





Part

TF9N70

Description

AOTF9N70



Feature


AOT9N70/AOTF9N70 700V, 9A N-Channel MOSF ET General Description The AOT9N70 & A OTF9N70 have been fabricated using an a dvanced high voltage MOSFET process tha t is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RD S(on), Ciss and Crss along with guarant eed avalanche capability these parts ca n be adopted quick.
Manufacture

Alpha & Omega Semiconductors

Datasheet
Download TF9N70 Datasheet


Alpha & Omega Semiconductors TF9N70

TF9N70; ly into new and existing offline power s upply designs. For Halogen Free add "L" suffix to part number: AOT9N70L & AOTF 9N70L Product Summary VDS ID (at VGS=1 0V) RDS(ON) (at VGS=10V) 800V@150℃ 9A < 1.2Ω 100% UIS Tested 100% Rg Test ed Top View TO-220 TO-220F D G S G A OTF9N70 S S G AOT9N70 D D C unless otherwise noted Absolute Maximum Rating s TA=25° AOT9N70 Param.


Alpha & Omega Semiconductors TF9N70

eter Symbol Drain-Source Voltage VDS Gat e-Source Voltage Continuous Drain Curre nt Pulsed Drain Current C Avalanche Cur rent C Repetitive avalanche energy C Si ngle plused avalanche energy G Peak dio de recovery dv/dt TC=25° C Power Dissi pation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8 " from case for 5 s.


Alpha & Omega Semiconductors TF9N70

econds Thermal Characteristics Parameter A,D Maximum Junction-to-Ambient A AOT F9N70 700 ±30 9* 5.8* 33 3.2 77 154 5 50 0.4 -55 to 150 300 AOTF9N70L Units V V VGS TC=25° C TC=100° C ID IDM I AR EAR EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS AOT9N70 65 0.5 0.53 236 1.8 9 5.8 9* 5.8* A A mJ mJ V/ns W W/ oC ° C ° C AOTF9N70L 65 -4.5 Units ° C/ W ° C/W ° C/W 27.8 0.22 .

Part

TF9N70

Description

AOTF9N70



Feature


AOT9N70/AOTF9N70 700V, 9A N-Channel MOSF ET General Description The AOT9N70 & A OTF9N70 have been fabricated using an a dvanced high voltage MOSFET process tha t is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RD S(on), Ciss and Crss along with guarant eed avalanche capability these parts ca n be adopted quick.
Manufacture

Alpha & Omega Semiconductors

Datasheet
Download TF9N70 Datasheet




 TF9N70
AOT9N70/AOTF9N70
700V, 9A N-Channel MOSFET
General Description
Product Summary
The AOT9N70 & AOTF9N70 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOT9N70L & AOTF9N70L
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
TO-220
Top View
TO-220F
800V@150
9A
< 1.2
D
AOT9N70
DS
G
AOTF9N70
S
GD
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT9N70
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
9
5.8
TC=25°C
Power Dissipation B Derate above 25oC
PD
236
1.8
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
AOT9N70
65
0.5
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.53
AOTF9N70
700
±30
9*
5.8*
33
3.2
77
154
5
50
0.4
-55 to 150
300
AOTF9N70
65
--
2.5
G
S
AOTF9N70L
9*
5.8*
27.8
0.22
AOTF9N70L
65
--
4.5
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev 2: Feb 2012
www.aosmd.com
Page 1 of 6




 TF9N70
AOT9N70/AOTF9N70
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=700V, VGS=0V
VDS=560V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=4.5A
gFS Forward Transconductance
VDS=40V, ID=4.5A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
700
800
V
0.84
V/ oC
1
µA
10
±100 nΑ
3 3.9 4.5 V
0.94 1.2
10 S
0.74 1
V
9A
33 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1085
90
6
2
1357
113
7.4
4
1630
147
11
6
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=560V, ID=9A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=350V, ID=9A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=9A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=9A,dI/dt=100A/µs,VDS=100V
23 28.5 35
5.5 6.8 8.2
9.3 11.6 18
35
61
76
48
300 375 450
6 7.5 9
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=30mH, IAS=3.2A, VDD=150V, RG=25, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: Feb 2012
www.aosmd.com
Page 2 of 6




 TF9N70
AOT9N70/AOTF9N70
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
18
10V
15
6.5V
12
9 6V
6
3
VGS=5.5V
0
0 5 10 15 20 25 30
VDS (Volts)
Fig 1: On-Region Characteristics
3.0
2.5
2.0
1.5
1.0
VGS=10V
0.5
0.0
0 4 8 12 16 20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
100
VDS=40V
10
125°C
1
-55°C
25°C
0.1
2468
VGS(Volts)
Figure 2: Transfer Characteristics
3
10
2.5
VGS=10V
2 ID=4.5A
1.5
1
0.5
0
-100 -50 0 50 100 150 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.2
1.1
1
0.9
0.8
-100 -50 0 50 100 150 200
TJ (°C)
Figure 5:Break Down vs. Junction Temparature
1.0E+02
1.0E+01
40
1.0E+00
1.0E-01
1.0E-02
125°C
25°C
1.0E-03
1.0E-04
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 2: Feb 2012
www.aosmd.com
Page 3 of 6



Recommended third-party TF9N70 Datasheet






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