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Barrier Diodes. HSMS-280F Datasheet

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Barrier Diodes. HSMS-280F Datasheet






HSMS-280F Diodes. Datasheet pdf. Equivalent




HSMS-280F Diodes. Datasheet pdf. Equivalent





Part

HSMS-280F

Description

Surface Mount RF Schottky Barrier Diodes



Feature


www.DataSheet4U.com Agilent HSMS-280x S urface Mount RF Schottky Barrier Diodes Data Sheet Features • Surface Mount Packages • High Breakdown Voltage • Low FIT (Failure in Time) Rate* Descr iption/Applications These Schottky diod es are specifically designed for both a nalog and digital applications. This se ries offers a wide range of specificati ons and package configur.
Manufacture

Agilent Technologies

Datasheet
Download HSMS-280F Datasheet


Agilent Technologies HSMS-280F

HSMS-280F; ations to give the designer wide flexibi lity. The HSMS-280x series of diodes is optimized for high voltage application s. Note that Agilent’s manufacturing techniques assure that dice found in pa irs and quads are taken from adjacent s ites on the wafer, assuring the highest degree of match. Package Lead Code Id entification, SOT-323 (Top View) SINGLE SERIES • Six-sigma.


Agilent Technologies HSMS-280F

Quality Level • Single, Dual and Quad Versions • Tape and Reel Options Ava ilable • Lead-free Option Available B COMMON ANODE C COMMON CATHODE * For more information see the Surface Mount Schottky Reliability Data Sheet. E F Package Lead Code Identification, SOT -363 (Top View) HIGH ISOLATION UNCONNEC TED PAIR 6 5 4 UNCONNECTED TRIO 6 5 4 Package Lead Code Ident.


Agilent Technologies HSMS-280F

ification, SOT-23/SOT-143 (Top View) SIN GLE 3 SERIES 3 COMMON ANODE 3 COMMON CA THODE 3 1 2 3 K COMMON CATHODE QUAD 6 5 4 1 2 3 L COMMON ANODE QUAD 6 5 4 1 #0 2 1 #2 2 1 #3 2 1 # 4 2 1 2 M 3 1 2 N 3 UNCONNECT ED PAIR 3 4 RING QUAD 3 4 BRIDGE QUAD 3 4 BRIDGE QUAD 6 5 4 6 RING QUAD 5 4 1 2 1 #5 2 1 #7 2 1 #8 2 P 3 1 2 R 3 .

Part

HSMS-280F

Description

Surface Mount RF Schottky Barrier Diodes



Feature


www.DataSheet4U.com Agilent HSMS-280x S urface Mount RF Schottky Barrier Diodes Data Sheet Features • Surface Mount Packages • High Breakdown Voltage • Low FIT (Failure in Time) Rate* Descr iption/Applications These Schottky diod es are specifically designed for both a nalog and digital applications. This se ries offers a wide range of specificati ons and package configur.
Manufacture

Agilent Technologies

Datasheet
Download HSMS-280F Datasheet




 HSMS-280F
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Agilent HSMS-280x
Surface Mount RF
Schottky Barrier Diodes
Data Sheet
Description/Applications
These Schottky diodes are
specifically designed for both
analog and digital applications.
This series offers a wide range of
specifications and package
configurations to give the
designer wide flexibility. The
HSMS-280x series of diodes is
optimized for high voltage
applications.
Package Lead Code
Identification, SOT-323
(Top View)
SINGLE
SERIES
B
COMMON
ANODE
C
COMMON
CATHODE
Note that Agilent’s manufacturing
techniques assure that dice found
in pairs and quads are taken from
adjacent sites on the wafer,
assuring the highest degree of
match.
E
F
Package Lead Code Identification, SOT-23/SOT-143
(Top View)
SINGLE
3
SERIES
3
COMMON
ANODE
3
COMMON
CATHODE
3
Features
Surface Mount Packages
High Breakdown Voltage
Low FIT (Failure in Time)
Rate*
Six-sigma Quality Level
Single, Dual and Quad
Versions
Tape and Reel Options
Available
Lead-free Option Available
* For more information see the
Surface Mount Schottky Reliability
Data Sheet.
Package Lead Code
Identification, SOT-363
(Top View)
HIGH ISOLATION UNCONNECTED
UNCONNECTED PAIR
TRIO
654
654
123
K
COMMON
CATHODE QUAD
654
123
L
COMMON
ANODE QUAD
654
12
#0
UNCONNECTED
PAIR
34
12
#2
RING
QUAD
34
12
#5
12
#7
12
#3
BRIDGE
QUAD
34
12
#8
12
#4
123
M
BRIDGE
QUAD
654
123
P
123
N
RING
QUAD
654
123
R
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 HSMS-280F
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2
Pin Connections and Package Marking, SOT-363
1 6 Notes:
1. Package marking provides
2 5 orientation and identification.
2. See Electrical Specificationsfor
3 4 appropriate package marking.
ESD WARNING:
Handling Precautions Should Be Taken
To Avoid Static Discharge.
Absolute Maximum Ratings[1] TC = 25°C
Symbol
Parameter
Unit
SOT-23 / SOT-143
SOT-323 / SOT-363
If
Forward Current (1 µs Pulse)
Amp
1
PIV
Peak Inverse Voltage
V Same as VBR
Tj
Junction Temperature
°C
150
Tstg
Storage Temperature
°C
-65 to 150
θjc
Thermal Resistance[2]
°C/W
500
1
Same as VBR
150
-65 to 150
150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. TC = +25°C, where TC is defined to be the temperature at the package pins where contact is made to the circuit board.
Electrical Specifications TA = 25°C, Single Diode[3]
Part Package
Number Marking Lead
HSMS[4] Code Code Configuration
Minimum
Breakdown
Voltage
VBR (V)
Maximum
Forward
Voltage
VF (mV)
Maximum
Forward
Voltage
VF (V) @
IF (mA)
Maximum
Reverse
Leakage
IR (nA) @
VR (V)
Maximum
Capacitance
CT (pF)
Typical
Dynamic
Resistance
RD () [5]
2800 A0 0 Single
70
2802 A2 2 Series
2803 A3 3 Common Anode
2804 A4 4 Common Cathode
2805 A5 5 Unconnected Pair
2807 A7 7 Ring Quad[4]
2808 A8 8 Bridge Quad[4]
280B A0 B Single
280C A2 C Series
280E A3 E Common Anode
280F A4 F Common Cathode
280K AK K High Isolation
Unconnected Pair
280L AL L Unconnected Trio
280M H M Common Cathode Quad
280N N N Common Anode Quad
280P AP P Bridge Quad
280R O R Ring Quad
410 1.0 15 200 50
2.0
Test Conditions
IR = 10 µA IF = 1 mA
VF = 0 V
f = 1 MHz
Notes:
1. VF for diodes in pairs and quads in 15 mV maximum at 1 mA.
2. CTO for diodes in pairs and quads is 0.2 pF maximum.
3. Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.
4. See section titled Quad Capacitance.
5. RD = RS + 5.2 at 25°C and If = 5 mA.
35
IF = 5 mA
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 HSMS-280F
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3
Quad Capacitance
Capacitance of Schottky diode
quads is measured using an
HP4271 LCR meter. This
instrument effectively isolates
individual diode branches from
the others, allowing accurate
capacitance measurement of each
branch or each diode. The
conditions are: 20 mV R.M.S.
voltage at 1 MHz. Agilent defines
this measurement as CM, and it
is equivalent to the capacitance of
the diode by itself. The equivalent
diagonal and adjacent
capacitances can then be
calculated by the formulas given
below.
In a quad, the diagonal capaci-
tance is the capacitance between
points A and B as shown in the
figure below. The diagonal
capacitance is calculated using
the following formula
CDIAGONAL = _C_1_x__C_2_ + _C__3 _x_C__4
C1 + C2 C3 + C4
C1
C
C2
A
C3
C4
B
The equivalent adjacent
capacitance is the capacitance
between points A and C in the
figure below. This capacitance is
calculated using the following
formula
CADJACENT = C1 + _______1_____
11 1
–– + –– + ––
C2 C3 C4
This information does not apply
to cross-over quad diodes.
Linear Equivalent Circuit, Diode Chip
Rj
RS
Cj
RS = series resistance (see Table of SPICE parameters)
C j = junction capacitance (see Table of SPICE parameters)
Rj =
8.33 X 10-5 nT
Ib + Is
where
Ib = externally applied bias current in amps
Is = saturation current (see table of SPICE parameters)
T = temperature, °K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-280x product,
please refer to Application Note AN1124.
SPICE Parameters
Parameter Units HSMS-280x
BV V
75
CJ0 pF
1.6
EG eV 0.69
IBV A E - 5
IS A 3E - 8
N 1.08
RS
30
PB V 0.65
PT 2
M 0.5
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