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Effect Transistor. STD432S Datasheet

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Effect Transistor. STD432S Datasheet






STD432S Transistor. Datasheet pdf. Equivalent




STD432S Transistor. Datasheet pdf. Equivalent





Part

STD432S

Description

N-Channel Logic Level Enhancement Mode Field Effect Transistor



Feature


STU/D432S SamHop Microelectronics Corp. Nov,19,2007 ver1.4 N-Channel Logic Lev el Enhancement Mode Field Effect Transi stor 4 PRODUCT SUMMARY VDSS 40V FEATUR ES ( m W ) Max ID 50A RDS(ON) Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-25 1 Package. D 9 @ VGS = 10V D G S G D S G STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(l-PA.
Manufacture

SamHop Microelectronics

Datasheet
Download STD432S Datasheet


SamHop Microelectronics STD432S

STD432S; K) S ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted) Parameter Drai n-Source Voltage Gate-Source Voltage Dr ain Current-Continuous @Ta -Pulsed a Dr ain-Source Diode Forward Current Avalan che Current Avalanche Energy c a Symbo l VDS VGS a Limit 40 20 50 100 20 23 1 30 50 -55 to 175 Unit V V A A A A mJ W C 25 C ID IDM IS I AS E AS PD TJ, TS TG b c Maximum .


SamHop Microelectronics STD432S

Power Dissipation Ta= 25 C Operating J unction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resista nce, Junction-to-Case Thermal Resistanc e, Junction-to-Ambient R JC R JA 3 50 C /W C /W 1 STU/D432S ELECTRICAL CHARA CTERISTICS (TC=25 C unless otherwise no ted) Parameter 5 Symbol BVDSS IDSS IGS S a Condition V GS = 0V, ID = 250uA V DS = 32V, V GS =0V.


SamHop Microelectronics STD432S

V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS = 10V , ID =10A V GS = 4.5 V, ID =5A VDS = 10V, VGS = 10V VDS = 10 V, ID = 10A Min Typ Max Unit 40 1 V uA 100 nA 1.25 1.6 7 9 30 28 1130 240 145 3 9 11 V OFF CHARACTERISTICS Drain-So urce Breakdown Voltage Zero Gate Voltag e Drain Current Gate-Body Leakage ON C HARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) ID.

Part

STD432S

Description

N-Channel Logic Level Enhancement Mode Field Effect Transistor



Feature


STU/D432S SamHop Microelectronics Corp. Nov,19,2007 ver1.4 N-Channel Logic Lev el Enhancement Mode Field Effect Transi stor 4 PRODUCT SUMMARY VDSS 40V FEATUR ES ( m W ) Max ID 50A RDS(ON) Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-25 1 Package. D 9 @ VGS = 10V D G S G D S G STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(l-PA.
Manufacture

SamHop Microelectronics

Datasheet
Download STD432S Datasheet




 STD432S
STU/D432S
SamHop Microelectronics Corp.
Nov,19,2007 ver1.4
N-Channel Logic Level Enhancement Mode Field Effect Transistor
4 PRODUCT SUMMARY
VDSS
ID
RDS(ON) ( m W ) Max
40V 50A
9 @ VGS = 10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
D
G
S
STU SERIES
TO-252AA(D-PAK)
GDS
STD SERIES
TO-251(l-PAK)
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuousa @Ta
25 C
-Pulsed b
Drain-Source Diode Forward Current a
Avalanche Current c
Avalanche Energy c
Maximum Power Dissipation a
Ta= 25 C
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
Symbol
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, TSTG
Limit
40
20
50
100
20
23
130
50
-55 to 175
Thermal Resistance, Junction-to-Case R JC 3
Thermal Resistance, Junction-to-Ambient
R JA
50
Unit
V
V
A
A
A
A
mJ
W
C
C /W
C /W
1




 STD432S
STU/D432S
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
5 OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS a
Gate Threshold Voltage
Drain-Source On-State Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol Condition
Min Typ Max Unit
BVDSS VGS =0V, ID =250uA
40
IDSS VDS =32V, VGS =0V
IGSS VGS = 20V, VDS =0V
V
1 uA
100 nA
VGS(th) VDS =VGS, ID = 250uA 1.25 1.6 3 V
VGS= 10V , ID =10A
RDS(ON)
VGS = 4.5V, ID =5A
7 9 m oh
9 11 m oh
ID(ON) VDS = 10V, VGS = 10V
gFS VDS = 10V, ID =10A
30
28
A
S
CISS
COSS
VDS=15V, VGS= 0V
f =1.0MHZ
CRSS
tD(ON) VDD = 15V
tr ID = 10 A
tD(OFF)
VGS = 10V
RGEN= 3.3 ohm
tf
Qg VDS =15V, ID =10A,VGS =10V
VDS =15V, ID =10A,VGS =4.5V
Qgs VDS =15V, ID = 10A
Qgd VGS =10V
2
1130 PF
240 PF
145 PF
18 ns
22 ns
61 ns
9.6 ns
23.5 nC
11.5 nC
2.7 nC
3.2 nC




 STD432S
S T U/D432S
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
DRAIN-SOURCE DIODE CHARACTERISTICS a
Diode Forward Voltage
VSD VGS = 0V, Is = 20A
Min Typ Max Unit
0.91 1.3 V
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
c. Starting TJ=25 c , L =0.5 mH , RG=25 W , IAS = 23A , VDD<-V(BR)DSS (See Figure13)
100
V GS =10V
80
60
40
20
V GS =4V
V GS =3.5V
V GS =3V
V GS =2.5V
60
48
36
-55 C
24
T j=125 C
12 25 C
0
0 0.5 1 1.5 2 2.5 3
V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
0
0 0.7 1.4 2.1 2.8 3.5 4.2
V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
20
16
12 V GS =4.5V
8
V GS =10V
4
1
1 20 40 60 80 100
ID, Drain C urrent (A)
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
2.0
1.8
V G S =10V
1.6 ID=10A
1.4 V G S =4.5V
ID=5A
1.2
1.0
0
0 25 50 75 100 125 150
T j( C )
T j, J unction T emperature ( C )
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature



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