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IGBT. H40T120 Datasheet

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IGBT. H40T120 Datasheet






H40T120 IGBT. Datasheet pdf. Equivalent




H40T120 IGBT. Datasheet pdf. Equivalent





Part

H40T120

Description

IGBT



Feature


IHW40T120 Soft Switching Series Low Los s DuoPack : IGBT in TrenchStop® and Fi eldstop technology with soft, fast reco very anti-parallel EmCon HE diode C • • • • • • • Short c ircuit withstand time – 10µs Designe d for : - Soft Switching Applications - Induction Heating TrenchStop® and Fie ldstop technology for 1200 V applicatio ns offers : - very tight parameter dist.
Manufacture

Infineon

Datasheet
Download H40T120 Datasheet


Infineon H40T120

H40T120; ribution - high ruggedness, temperature stable behavior - easy parallel switchi ng capability due to positive temperatu re coefficient in VCE(sat) Very soft, f ast recovery anti-parallel EmCon™ HE diode Low EMI Qualified according to JE DEC1 for target applications Applicatio n specific optimisation of inverse diod e •Pb-free lead plating; RoHS complia nt G E PG-TO-247-3 .


Infineon H40T120

Type IHW40T120 VCE 1200V IC 40A VCE( sat),Tj=25°C 1.8V Tj,max 150°C Mark ing H40T120 Package PG-TO247-3 Maximu m Ratings Parameter Collector-emitter v oltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, t p limited by Tjmax Turn off safe operat ing area VCE ≤ 1200V, Tj ≤ 150°C D iode forward current TC = 25°C TC = 10 0°C Diode pulsed current, tp.


Infineon H40T120

limited by Tjmax Diode surge non repeti tive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25 °C, tp ≤ 2.5µs, sine halfwave TC = 100°C, tp ≤ 2.5µs, sine halfwave Ga te-emitter voltage Short circuit withst and time 2) Symbol VCE IC Value 1200 75 40 Unit V A ICpuls IF 105 105 31 19.8 IFpuls IFSM 47 A 78 200 160 ±20 10 270 -40...+150 -55...+150.

Part

H40T120

Description

IGBT



Feature


IHW40T120 Soft Switching Series Low Los s DuoPack : IGBT in TrenchStop® and Fi eldstop technology with soft, fast reco very anti-parallel EmCon HE diode C • • • • • • • Short c ircuit withstand time – 10µs Designe d for : - Soft Switching Applications - Induction Heating TrenchStop® and Fie ldstop technology for 1200 V applicatio ns offers : - very tight parameter dist.
Manufacture

Infineon

Datasheet
Download H40T120 Datasheet




 H40T120
Soft Switching Series
IHW40T120
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
Short circuit withstand time – 10µs
Designed for :
- Soft Switching Applications
- Induction Heating
TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
Very soft, fast recovery anti-parallel EmConHE diode
Low EMI
Qualified according to JEDEC1 for target applications
Application specific optimisation of inverse diode
• •Pb-free lead plating; RoHS compliant
G
PG-TO-247-3
C
E
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
IHW40T120 1200V 40A
1.8V
150°C
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp 2.5µs, sine halfwave
TC = 100°C, tp 2.5µs, sine halfwave
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 1200V, Tj 150°C
Power dissipation, TC = 25°C
Operating junction temperature
Storage temperature
Marking
H40T120
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
tSC
Ptot
Tj
Tstg
Package
PG-TO247-3
Value
1200
75
40
105
105
31
19.8
47
78
200
160
±20
10
270
-40...+150
-55...+150
Unit
V
A
A
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.3 Sep 08




 H40T120
Soft Switching Series
Soldering temperature, 1.6mm (0.063 in.) from case for 10s -
IHW40T120
260
Power Semiconductors
2
Rev. 2.3 Sep 08




 H40T120
Soft Switching Series
IHW40T120
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
0.45
1.1
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
VGE=0V, IC=1.5mA
VGE = 15V, IC=40A
Tj=25°C
Tj=125°C
Tj=150°C
VGE=0V, IF=18A
Tj=25°C
Tj=125°C
Tj=150°C
IC=1.5mA,VCE=VGE
VCE=1200V,
VGE=0V
Tj=25°C
Tj=150°C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=40A
min.
1200
-
-
-
5.0
-
-
-
-
Value
Typ.
-
1.8
2.1
2.3
1.65
1.7
1.7
5.8
-
-
-
21
6
max. Unit
-V
2.3
-
-
2.15
6.5
mA
0.4
4.0
600 nA
-S
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
LE
measured 5mm (0.197 in.) from case
Short circuit collector current1)
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=40A
VGE=15V
VGE=15V,tSC10µs
VCC = 600V,
Tj = 25°C
-
-
-
-
-
-
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
3
2500
130
110
203
13
210
- pF
-
-
- nC
- nH
-A
Rev. 2.3 Sep 08



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