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IGBT Modules. 7MBR25SC120 Datasheet

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IGBT Modules. 7MBR25SC120 Datasheet






7MBR25SC120 Modules. Datasheet pdf. Equivalent




7MBR25SC120 Modules. Datasheet pdf. Equivalent





Part

7MBR25SC120

Description

IGBT Modules



Feature


7MBR25SC120 PIM/Built-in converter with thyristor and brake (S series) 1200V / 25A / PIM Features · Low VCE(sat) · C ompact Package · P.C. Board Mount Modu le · Converter Diode Bridge Dynamic Br ake Circuit IGBT Modules Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier · Uninterrupt ible Power Supply Maximum ratings and characteristics Absolute .
Manufacture

Fuji Electric

Datasheet
Download 7MBR25SC120 Datasheet


Fuji Electric 7MBR25SC120

7MBR25SC120; maximum ratings (Tc=25°C unless without specified) Item Collector-Emitter volt age Gate-Emitter voltage Inverter Symb ol VCES VGES IC ICP -IC PC VCES VGES IC ICP Collector power disspation Repetit ive peak reverse voltage(Diode) Repetit ive peak off-state voltage Repetitive p eak reverse voltage Average on-state cu rrent Surge 0n-state current (Non-Repet itive) Junction tem.


Fuji Electric 7MBR25SC120

perature Repetitive peak reverse voltage Average output current Surge current ( Non-Repetitive) I2t (Non-Repetitive) PC V RRM V DRM V RRM IT(AV) ITSM Tjw V RR M IO IFSM I2t Tj Tstg Viso Condition Continuous 1ms Collector current Tc=2 5°C Tc=80°C Tc=25°C Tc=80°C Collec tor power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Brake 1 devic.


Fuji Electric 7MBR25SC120

e Continuous 1ms 1 device Tc=25°C Tc= 80°C Tc=25°C Tc=80°C 50Hz/60Hz sine wave Tj=125°C, 10ms half sine wave 5 0Hz/60Hz sine wave Tj=150°C, 10ms half sine wave Junction temperature (excep t Thyristor) Storage temperature Isolat ion between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque AC : 1 minute Rating 1200 ±20 35 25 .

Part

7MBR25SC120

Description

IGBT Modules



Feature


7MBR25SC120 PIM/Built-in converter with thyristor and brake (S series) 1200V / 25A / PIM Features · Low VCE(sat) · C ompact Package · P.C. Board Mount Modu le · Converter Diode Bridge Dynamic Br ake Circuit IGBT Modules Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier · Uninterrupt ible Power Supply Maximum ratings and characteristics Absolute .
Manufacture

Fuji Electric

Datasheet
Download 7MBR25SC120 Datasheet




 7MBR25SC120
7MBR25SC120
IGBT Modules
PIM/Built-in converter with thyristor
and brake (S series)
1200V / 25A / PIM
Features
· Low VCE(sat)
· Compact Package
· P.C. Board Mount Module
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motor Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Symbol
VCES
VGES
IC
ICP
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
-IC
PC
VCES
VGES
IC
ICP
Collector power disspation
Repetitive peak reverse voltage(Diode)
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-state current
Surge 0n-state current (Non-Repetitive)
Junction temperature
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I2t (Non-Repetitive)
Junction temperature (except Thyristor)
Storage temperature
Isolation between terminal and copper base *2
voltage between thermistor and others *3
Mounting screw torque
PC
VRRM
VDRM
VRRM
IT(AV)
ITSM
Tjw
VRRM
IO
IFSM
I2t
Tj
Tstg
Viso
Condition
Continuous
1ms
1 device
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Continuous
1ms
1 device
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
50Hz/60Hz sine wave
Tj=125°C, 10ms half sine wave
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
AC : 1 minute
Rating
1200
±20
35
25
70
50
25
180
1200
±20
25
15
50
30
110
1200
1600
1600
25
290
125
1600
25
260
338
+150
-40 to +125
AC 2500
AC 2500
1.7 *1
*1 Recommendable value : 1.3 to 1.7 N·m (M4)
*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26
should be connected together and shorted to copper base.
Unit
V
V
A
A
A
W
V
V
A
A
W
V
V
V
A
A
°C
V
A
A
A2s
°C
°C
V
V
N·m




 7MBR25SC120
IGBT Module
7MBR25SC120
Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Symbol
Condition
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off
Forward on voltage
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
off-state current
Reverse current
Gate trigger current
Gate trigger voltage
On-state voltage
Forward on voltage
Reverse current
Resistance
B value
ICES
IGES
VGE(th)
VCE(sat)
Cies
ton
tr
toff
tf
VF
trr
ICES
IGES
VCE(sat)
ton
tr
toff
tf
IRRM
IDM
IRRM
IGT
VGT
VTM
VFM
IRRM
R
B
VCE=1200V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=25mA
VGE=15V, Ic=25A chip
terminal
VGE=0V, VCE=10V, f=1MHz
VCC=600V
IC=25A
VGE=±15V
RG=51
IF=25A
chip
terminal
IF=25A
VCES=1200V, VGE=0V
VCE=0V, VGE=±20V
IC=15A, VGE=15V chip
terminal
VCC=600V
IC=15A
VGE=±15V
RG=82
VR=1200V
VDM=1600V
VRM=1600V
VD=6V, IT=1A
VD=6V, IT=1A
ITM=25A
chip
terminal
IF=25A
chip
terminal
VR=1600V
T=25°C
T=100°C
T=25/50°C
Characteristics
Min.
Typ.
Max.
100
200
5.5 7.2
8.5
2.1
2.2 2.6
3000
0.35
1.2
0.25
0.6
0.45
1.0
0.08
0.3
2.3
2.4 3.2
350
100
200
2.1
2.2 2.6
0.35
1.2
0.25
0.6
0.45
1.0
0.08
0.3
100
1.0
1.0
100
2.5
1.05
1.15
1.1
1.1
1.2 1.5
100
5000
465 495
520
3305
3375
3450
Unit
µA
nA
V
V
pF
µs
V
ns
µA
nA
V
µs
µA
mA
mA
mA
V
V
V
µA
K
Thermal resistance Characteristics
Item
Symbol
Condition
Inverter IGBT
Thermal resistance ( 1 device )
Rth(j-c)
Inverter FWD
Brake IGBT
Thyristor
Converter Diode
Contact thermal resistance *
Rth(c-f)
With thermal compound
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Min.
Characteristics
Typ.
Max.
0.05
0.69
1.30
1.14
1.00
0.90
Unit
°C/W




 7MBR25SC120
IGBT Module
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 25°C (typ.)
60
VGE= 20V 15V 12V
50
40
10V
30
20
10
8V
0
012345
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
60
Tj= 25°C
Tj= 125°C
50
40
30
20
10
0
012345
Collector - Emitter voltage : VCE [ V ]
10000
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
1000
Cies
100
0
Coes
Cres
5 10 15 20 25 30
Collector - Emitter voltage : VCE [ V ]
35
7MBR25SC120
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125°C (typ.)
60
VGE= 20V 15V 12V
50
40
10V
30
20
10
0
0
1234
Collector - Emitter voltage : VCE [ V ]
8V
5
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C (typ.)
10
8
6
4
2
0
5
1000
Ic= 50A
Ic= 25A
Ic= 12.5A
10 15 20
Gate - Emitter voltage : VGE [ V ]
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=25A, Tj= 25°C
25
25
800 20
600 15
400 10
200 5
00
0 50 100 150 200 250
Gate charge : Qg [ nC ]



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