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Switching Diode. CDBAV99W Datasheet

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Switching Diode. CDBAV99W Datasheet






CDBAV99W Diode. Datasheet pdf. Equivalent




CDBAV99W Diode. Datasheet pdf. Equivalent





Part

CDBAV99W

Description

Small Signal Switching Diode



Feature


CDSOT323 SERIES Small Signal Switching Diode, SOT323 Case CDBAV99W/ CDBAV70W/ CDBAW56W/ CDMMBD4148W FEATURES „ „ „ Silicon epitaxial planar diode SMD chip pattern, SOT323 case, available a lso in SOT23 case Leadfree and RoHS com pliance components For small signal swi tching and operating ambient temperatur e less than 55oC and voltage withstand less than 60V; not sui.
Manufacture

Crownpo

Datasheet
Download CDBAV99W Datasheet


Crownpo CDBAV99W

CDBAV99W; table for AC switching input as rectifie d circuit and high reverse voltage loca tion. Size: SOT323 case Weight: approx. 11mg Marking: BAV99 as anode to cathod e series dual switching diode BAV70 as common cathode dual switching diode BAW 56 as common anode dual switching diode BD4148 as SOT323 case single switching diode CDBAV99W CDBAV70W CDBAW56W CDMMB D4148W MECHANICAL.


Crownpo CDBAV99W

CHARACTERISTICS „ „ „ GRAPHIC SYMBO L DIMENSIONS Dimension/mm L W T C SOT3 23 2.0±0.2 2.1±0.2 0.85±0.1 0.55±0. 2 25-NOV-10 Document No.32021 1 CDSO T323 SERIES THERMAL CHARACTERISTICS1) Parameter at Tamb=25oC1) Forward Power Dissipation Power derating above 25oC J unction Temperature Thermal Resistance Junction to Ambient air Operating& Stor age Temperature range 1) .


Crownpo CDBAV99W

Valid provided that electrodes are kept at ambient temperature. Symbol Ptot Tj RθJA Tstg Value 200 1.6 150 625 -55 to 150 Unit mW mW/ oC o o C C/W o C M AXIMUM RATING1) Parameter at Tamb=25oC1 ) Repetitive Peak Reverse Voltage Avera ge rectified current sin half wave rect ification with resistive load Repetitiv e Peak Forward Current at Tamb=25°C No n-Repetitive Surge F.

Part

CDBAV99W

Description

Small Signal Switching Diode



Feature


CDSOT323 SERIES Small Signal Switching Diode, SOT323 Case CDBAV99W/ CDBAV70W/ CDBAW56W/ CDMMBD4148W FEATURES „ „ „ Silicon epitaxial planar diode SMD chip pattern, SOT323 case, available a lso in SOT23 case Leadfree and RoHS com pliance components For small signal swi tching and operating ambient temperatur e less than 55oC and voltage withstand less than 60V; not sui.
Manufacture

Crownpo

Datasheet
Download CDBAV99W Datasheet




 CDBAV99W
CDSOT323 SERIES
Small Signal Switching Diode, SOT323 Case
CDBAV99W/ CDBAV70W/ CDBAW56W/ CDMMBD4148W
FEATURES
„ Silicon epitaxial planar diode
„ SMD chip pattern, SOT323 case, available also in SOT23 case
„ Leadfree and RoHS compliance components
„ For small signal switching and operating ambient temperature less than 55oC and voltage withstand
less than 60V; not suitable for AC switching input as rectified circuit and high reverse voltage
location.
MECHANICAL CHARACTERISTICS
„ Size: SOT323 case
„ Weight: approx. 11mg
„ Marking: BAV99 as anode to cathode series dual switching diode
BAV70 as common cathode dual switching diode
BAW56 as common anode dual switching diode
BD4148 as SOT323 case single switching diode
GRAPHIC SYMBOL
CDBAV99W
CDBAV70W
CDBAW56W
CDMMBD4148W
DIMENSIONS
Dimension/mm
L
W
T
C
SOT323
2.0±0.2
2.1±0.2
0.85±0.1
0.55±0.2
25-NOV-10
Document No.32021
1




 CDBAV99W
CDSOT323 SERIES
THERMAL CHARACTERISTICS1)
Parameter at Tamb=25oC1)
Symbol
Forward Power Dissipation
Power derating above 25oC
Ptot
Junction Temperature
Tj
Thermal Resistance Junction to Ambient air
Operating& Storage Temperature range
RθJA
Tstg
1) Valid provided that electrodes are kept at ambient temperature.
MAXIMUM RATING1)
Parameter at Tamb=25oC1)
Symbol
Repetitive Peak Reverse Voltage
Average rectified current sin half wave
rectification with resistive load
VRRM
IF(AV)
Repetitive Peak Forward Current at Tamb=25°C
Non-Repetitive Surge Forward Current
at t<1s and Tj=25oC
at t8.3ms and Tj=25oC
IFRM
IFSM
1) Valid provided that electrodes are kept at ambient temperature.
2) Single diode
3) Double diode
ELECTRICAL CHARACTERISTICS1)
Parameter at Tamb=25oC1)
Symbol
Forward Voltage at IF=10mA
at IF=50mA
at IF=100mA
Leakage Current at VR=75V
Capacitance at VR=0V,f=1MHz
Reverse Recovery Time at IF =IR=10mA,RL=100Ω
VF
IR
Ctot
trr
1) Valid provided that electrodes are kept at ambient temperature.
Value
200
1.6
150
625
-55 to 150
Value
75
1502)
1303)
200
500
1000
Value
0.855 MAX
1.0 MAX
1.25 MAX
2.5 MAX
4 MAX
6 MAX
Unit
mW
mW/ oC
oC
oC/W
oC
Unit
V
mA
mA
mA
mA
mA
Unit
V
V
V
uA
pF
ns
25-NOV-10
Document No.32021
2




 CDBAV99W
CDSOT323 SERIES
TYPICAL CHARACTERISTICS
Figure 1. Forward Characteristic
Figure 2. Power De-rating
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160 180 200
Tamb-Ambient Temperature/oC
Figure 3. Forward Current De-rating
Figure 4. Reverse Voltage De-rating
500 200
400
150
300
100
200
50
100
0
0 20 40 60 80 100 120 140 160 180 200
Tamb-Ambient Temperature/oC
TEST CHARACTERISTICS
0
0 20 40 60 80 100 120 140 160 180 200
Tamb-Ambient Temperature/oC
Test Item
Solderability
Resistance to Soldering Heat
Humidity Steady State
Continue Forward Operating Life
Thermal Shock
Bending Strength
Test Condition
Sn bath at 245±5oC for 2±0.5s
Sn bath at 260±5oC for 10±2s
At 85oC 85%RH for 168hrs
At 25oC IF =1.1IF for 1000hrs
-55 ±5oC/5min to 150±5oC/5min
for 10cycles
Bending up to 2mm for 1cycle
Requirement
>95% area tin covered
VF,VR & IR within spec;
no mechanical damage
VF,VR & IR within spec
VF,VR & IR within spec
VF,VR & IR within spec
VF,VR & IR within spec;
no mechanical damage
25-NOV-10
Document No.32021
3



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