Mode Mosfet. WPM2341 Datasheet

WPM2341 Mosfet. Datasheet pdf. Equivalent

Part WPM2341
Description P-Channel Enhancement Mode Mosfet
Feature TM WPM2341 P-Channel Enhancement Mode Mosfet FEATURES • Higher Efficiency Extending Battery Life • .
Manufacture SEMIWILL
Datasheet
Download WPM2341 Datasheet



WPM2341
TM
P-Channel Enhancement Mode Mosfet
WPM2341
FEATURES
• Higher Efficiency Extending Battery Life
• Miniature SOT23-3 Surface Mount Package
• Super high density cell design for extremely low RDS (ON)
APPLICATIONS
• DC/DC Converter
• Load Switch
• Battery Powered System
• LCD Display inverter
• Power Management in Portable, Battery Powered Products
SOT23-3 PACKAGE
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction) a
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
TA=25°C
TA=80°C
TA=25°C
TA=80°C
a. Surface Mounted on FR4 Board using 1 in sq pad size,2oz Cu.
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
5 s Steady State
-20
±8
-4.3 -3.5
-3.2 -2.5
-20
-1.7 -1
1.25 0.75
0.7 0.42
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient Thermal Resistance b
t5 s
Steady State
b. Surface Mounted on FR4 Board using 1 in sq pad size, 2oz Cu.
Symbol
RθJA
Typical
75
125
Maximum
100
165
Unit
°C/W
REV.2011.05.11
Page 1
www.semiwill.com



WPM2341
TM
MOSFET ELECTRICAL CHARACTERISTICS(Tj=25 °C unless otherwise specified)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate –Source leakage current
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Threshold gate charge
Gate-Source Charge
Gate-Drain Charge
Symbol
Test Condition
BVDSS
IDSS
IGSS
VGS = 0V,ID = -250uA
VDS =-16V,VGS = 0V
VGS =±8V,VDS = 0V
VGS(th)
VGS = VDS, ID =-250uA
RDS(on)
VGS = -4.5V, ID = -3.3A
VGS = -2.5V,ID = -2.8 A
gFS VDS = -5 V, ID = -3.3A
Dynamic Characteristics
Ciss
Coss VDS = -6 V, VGS = 0V, f = 1.0 MHz
Crss
td(on)
tr
td(off)
tf
QG( TOT)
QG( TH)
QGS
QGD
VGS = -4.5V, VDD = -6 V, ID = -1.0A,
RG=6.0ohm
VDS = -6 V,I D = -3.3A, VGS =-4.5V
Drain-Source Diode Characteristics and Maximun Ratings
Forward Diode Voltage
VSD
VGS = 0V,IS = -1.6A
PACKAGE OUTLINE DIMENSIONS
Min
-20
-0.35
Typ
-0.63
52
65
3
8
0.2
1.2
2.2
- 0.8
D
b
e
e1
SYMBOL
Millimeters
Min Max
A 1.05 1.25
A1 0 0.1
A2 1.05 1.15
b 0.3 0.5
c 0.1 0.2
D 2.82 3.02
c E 1.5 1.7
E1 2.65 2.95
e 0.950(BSC)
e1 1.8 2
L 0.3 0.6
θ 0° 8°
WPM2341
Max Units
V
-1 uA
±100 nA
-1 V
61 mohm
71 mohm
S
700 pF
160 pF
120 pF
25 ns
55 ns
90 ns
60 ns
13 nC
nC
nC
nC
V
Inches
Min Max
0.041
0.049
0 0.004
0.041
0.045
0.012
0.02
0.004
0.008
0.111
0.119
0.059
0.067
0.104
0.116
0.037( BSC)
0.071
0.079
0.012
0.024
0° 8°
REV.2011.05.11
Page 2
www.semiwill.com





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