Mode Mosfet. WPM2341 Datasheet

WPM2341 Mosfet. Datasheet pdf. Equivalent

Part WPM2341
Description P-Channel Enhancement Mode Mosfet
Feature WPM2341 WPM2341 P-Channel Enhancement Mode Mosfet http://www.willsemi.com Features z Higher Effic.
Manufacture WillSEMI
Datasheet
Download WPM2341 Datasheet



WPM2341
WPM2341
WPM2341
P-Channel Enhancement Mode Mosfet
Features
zHigher Efficiency Extending Battery Life
zMiniature SOT23-3 Surface Mount Package
zSuper high density cell design for extremely low RDS (ON)
Applications
zDC/DC Converter
zLoad Switch
zBattery Powered System
zLCD Display inverter
zPower Management in Portable, Battery Powered Products
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Steady
Symbol 5 s
Unit
State
Drain-Source Voltage
Gate-Source Voltage
VDS -20
V
VGS ± 8
Continuous Drain Current TA=25°C
(TJ = 150 °C)a
TA=80°C
Pulsed Drain Current
ID
IDM
-4.3 -3.5
-3.2 -2.5
-20
A
Continuous Source Current
(Diode Conduction) a
IS -1.7 -1
Maximum Power
Dissipation a
TA=25°C
TA=80°C
PD
1.25 0.75
W
0.7 0.42
Operating Junction and Storage
Temperature Range
TJ, Tstg - 55 to 150
°C
a. Surface Mounted on FR4 Board using 1 in sq pad size,2oz Cu.
http://www.willsemi.com
3
1
2
SOT 23-3
pin connections :
PïChannel
G1
S2
3D
Top View
Marking:
Drain
3
W41Z
G
1
Gate
2
Source
W 41= Specific Device Code
Z = Date Code
Order information
PartNumber
WPM2341Ͳ3/TR
Package
SOT23-3

Shipping 
3000Tape&Reel
http://www.willsemi.com
Page 1
12/19/2008Rev1.6



WPM2341
WPM2341
THERMAL RESISTANCE RATINGS 
Parameter
Junction-to-Ambient Thermal Resistance b
t”5s
Steady State
b. Surface Mounted on FR4 Board using 1 in sq pad size, 2oz Cu.
Symbol
RșJA
Typical
75
125
Maximum Unit
100
°C/W
165
MOSFET ELECTRICAL CHARACTERISTICS(TJ =25 ć unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate –Source leakage current
BVDSS
IDSS
IGSS
VGS = 0V,ID = -250ȝA
VDS =-16V,VGS = 0V
VGS = f8 V,VDS = 0V
-20
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
VGS(th)
RDS(on)
gFS
VGS = VDS, ID =-250ȝA
VGS = -4.5V, ID = -3.3A
VGS = -2.5V,ID = -2.8 A
VDS = -5 V, ID = -3.3A
-0.5
-0.63
44
56
3.0
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
VDS = -6 V, VGS = 0V,
f = 1.0 MHz
Crss
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Threshold gate charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
QG(TOT)
QG(TH)
QGS
QGD
VGS = -4.5V, VDD = -6 V,
ID = -1.0A, RG=6.0ȍ,
VDS = -6 V,ID = -3.3A,
VGS =-4.5V
8
0.2
1.2
2.2
Drain-Source Diode Characteristics and Maximun Ratings
Forward Diode Voltage
VSD VGS = 0V,IS = -1.6A
-0.8
Max
-1
f100
-0.76
53
67
700
160
120
25
55
90
60
13
Units
V
ȝA
nA
V
mȍ
mȍ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
V
http://www.willsemi.com
Page 2
12/19/2008 Rev1.6





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