AP4415GH. 4415GH Datasheet

4415GH AP4415GH. Datasheet pdf. Equivalent

Part 4415GH
Description AP4415GH
Feature AP4415GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lo.
Manufacture Advanced Power Electronics
Datasheet
Download 4415GH Datasheet



4415GH
Advanced Power
Electronics Corp.
AP4415GH/J
Pb Free Plating Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low On-resistance
www.DataSheet4U.cFoamst Switching Characteristic
RoHS Compliant
Description
G
D
S
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP4415GJ) is available for low-profile applications.
BVDSS
RDS(ON)
ID
-35V
36mΩ
-24A
GD
S TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
G
D
S
TO-251(J)
Rating
-35
±25
-24
-15
80
31.25
0.25
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Max.
Value
4
110
Units
/W
/W
Data and specifications subject to change without notice
200701052-1/4



4415GH
AP4415GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
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VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-16A
VGS=-4.5V, ID=-12A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=-250uA
VDS=-10V, ID=-16A
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V
VGS=±25V
ID=-16A
VDS=-24V
VGS=-4.5V
VDS=-15V
ID=-16A
RG=3.3Ω,VGS=-10V
RD=0.94Ω
VGS=0V
VDS=-25V
f=1.0MHz
-35 - - V
- -0.02 - V/
- - 36 mΩ
- - 60 mΩ
-1 - -3 V
- 18 -
S
- - -1 uA
- - -25 uA
- - ±100 nA
- 11 18 nC
- 2 - nC
- 4 - nC
- 10 - ns
- 52 - ns
- 20 - ns
- 7 - ns
- 990 1580 pF
- 220 - pF
- 150 - pF
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=-16A, VGS=0V
IS=-16A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 25 - ns
- 16 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
2/4





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