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TSF30H120C

Taiwan Semiconductor

Trench Schottky Rectifier


Description
TSF30H120C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free accordin...



Taiwan Semiconductor

TSF30H120C

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