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IRGBC20K-S

International Rectifier
Part Number IRGBC20K-S
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Jul 12, 2014
Detailed Description PD - 9.1130 IRGBC20K-S INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10µs @ 125°C, V GE = 15V • Sw...
Datasheet PDF File IRGBC20K-S PDF File

IRGBC20K-S
IRGBC20K-S

Overview
PD - 9.
1130 IRGBC20K-S INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency (over 5kHz) See Fig.
1 for Current vs.
Frequency curve G E C Short Circuit Rated UltraFast Fast IGBT VCES = 600V VCE(sat) ≤ 3.
5V @VGE = 15V, I C = 6.
0A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, highcurrent appl...


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