70T03GJ SSM70T03GJ Datasheet

70T03GJ Datasheet, PDF, Equivalent


Part Number

70T03GJ

Description

SSM70T03GJ

Manufacture

Silicon Standard

Total Page 5 Pages
Datasheet
Download 70T03GJ Datasheet


70T03GJ
SSM70T03GH,J
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
R DS(ON)
ID
30V
9m
60A
Pb-free; RoHS-compliant TO-251 (IPAK)
and TO-252 (DPAK)
G
D
S
TO-251 (suffix J)
G DS
TO-252 (suffix H)
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
The SSM70T03 acheives fast switching performance
with low gate charge without a complex drive circuit. It is
suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM70T03GH is in a TO-252 package, which is
widely used for commercial and industrial surface-mount
applications.
The through-hole version, the SSM70T03GJ in TO-251,
is available for vertical mounting, where a small footprint
is required on the board, and/or an external heatsink is
to be attached.
These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
The devices have a maximum junction temperature rating
of 175°C for improved thermal margin and reliability.
Symbol
VDS
VGS
ID
IDM
PD
EAS
TSTG
TJ
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current, TC = 25°C
Pulsed drain current1
TC = 100°C
Total power dissipation, TC = 25°C
Linear derating factor
Single pulse avalanche energy3
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
RΘJC
RΘJA
Parameter
Maximum thermal resistance, junction-case
Maximum thermal resistance, junction-ambient
Value
30
±20
60
43
195
53
0.36
29
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/°C
mJ
°C
°C
Value
2.8
110
Units
°C/W
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the safe operating area.
2.Pulse width <300us, duty cycle <2%.
3.VDD=25V , L=100uH , RG=25, IAS=24A.
10/16/2005 Rev.3.1
www.SiliconStandard.com
1 of 5

70T03GJ
SSM70T03GH,J
ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified)
Symbol
BVDSS
BV DSS/T j
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-source breakdown voltage
VGS=0V, ID=250uA
Breakdown voltage temperature coefficient Reference to 25°C, ID=1mA
Static drain-source on-resistance
VGS=10V, ID=33A
Gate threshold voltage
Forward transconductance
Drain-source leakage current
Gate-source leakage current
Total gate charge2
Gate-source charge
Gate-drain ("Miller") charge
Turn-on delay time2
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
VGS=4.5V, ID=20A
VDS=VGS, ID=250uA
VDS=10V, ID=33A
VDS=30V, VGS=0V
VDS=24V ,VGS=0V, Tj=175°C
VGS= ±20V
ID=33A
VDS=20V
VGS=4.5V
VDS=15V
ID=33A
RG=3.3Ω , VGS=10V
RD=0.45
VGS=0V
VDS=25V
f=1.0MHz
Min. Typ. Max. Units
30 -
-V
- 0.032 - V/°C
- - 9 m
- - 18 m
1 - 3V
- 35 -
S
- - 1 uA
- - 250 uA
- - ±100 nA
- 16.5 - nC
- 5 - nC
- 10.3 - nC
- 8.2 - ns
- 105 - ns
- 21.4 - ns
- 8.5 - ns
- 1485 - pF
- 245 - pF
- 170 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward voltage2
Reverse-recovery time2
Reverse-recovery charge
Test Conditions
IS=60A, VGS=0V
IS=30A, VGS=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ. Max. Units
- 1.3 V
29 - ns
12 - nC
Notes:
1.Pulse width must be limited to avoid exceeding the safe operating area.
2.Pulse width <300us, duty cycle <2%.
3.VDD=25V , L=100uH , RG=25, IAS=24A.
10/16/2005 Rev.3.1
www.SiliconStandard.com
2 of 5


Features SSM70T03GH,J N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS (ON) ID DESCRIPTION The SSM70T03 achei ves fast switching performance with low gate charge without a complex drive ci rcuit. It is suitable for low voltage a pplications such as DC/DC converters an d general load-switching circuits. The SSM70T03GH is in a TO-252 package, whic h is widely used for commercial and ind ustrial surface-mount applications. The through-hole version, the SSM70T03GJ i n TO-251, is available for vertical mou nting, where a small footprint is requi red on the board, and/or an external he atsink is to be attached. These devices are manufactured with an advanced proc ess, providing improved on-resistance a nd switching performance. The devices h ave a maximum junction temperature rati ng of 175°C for improved thermal margi n and reliability. 30V 9mΩ 60A Pb-f ree; RoHS-compliant TO-251 (IPAK) and T O-252 (DPAK) G G D S D S TO-251 (suf fix J) TO-252 (suffix H) ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS.
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