BIPOLAR TRANSISTOR. IRGP4063D-EPBF Datasheet


IRGP4063D-EPBF TRANSISTOR. Datasheet pdf. Equivalent


IRGP4063D-EPBF


INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063DPbF IRGP4063D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features
• • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package
C

VCES = 600V IC = 48A, TC = 100°C

G E

tSC ≥ 5μs, TJ(max) = 175°C

n-channel

VCE(on) typ. = 1.65V

Benefits
• High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI

C

G

E C G IRGP4063DPbF

C G

E

IRGP4063D-EPbF

G Gate

C Collector

E Emitter

Absolute Maximum Ratings
Parameter
V CES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM V GE P D @ TC = 25°C P D @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current Clamped Inductive Load Current Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current

Max.
600 96 48 200 192 96 48 192 ±20 ±30 330 170 -55 to +175

Units
V

c e

A

Continuous Gate-to-Emitter V...



IRGP4063D-EPBF
IRGP4063DPbF
IRGP4063D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (ON) Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 175 °C
• 5 μS short circuit SOA
• Square RBSOA
• 100% of the parts tested for 4X rated current (ILM)
• Positive VCE (ON) Temperature co-efficient
• Ultra fast soft Recovery Co-Pak Diode
• Tight parameter distribution
• Lead Free Package
C
G
E
n-channel
VCES = 600V
IC = 48A, TC = 100°C
tSC 5μs, TJ(max) = 175°C
VCE(on) typ. = 1.65V
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
C
E
GC
IRGP4063DPbF
G
E
C
G
IRGP4063D-EPbF
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
VCES
Parameter
Collector-to-Emitter Voltage
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
cClamped Inductive Load Current
IF @ TC = 25°C
IF @ TC = 100°C
IF M
Diode Continous Forward Current
Diode Continous Forward Current
eDiode Maximum Forward Current
VGE Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC = 25°C
PD @ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
600
96
48
200
192
96
48
192
±20
±30
330
170
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.45
0.92
–––
40
Units
V
A
V
W
°C
Units
°C/W
1 www.irf.com © 2013 International Rectifier
March 15, 2013

IRGP4063D-EPBF
IRGP4063DPbF/IRGP4063D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
Parameter
Collector-to-Emitter Breakdown Voltage
Min. Typ. Max. Units Conditions
f600 — — V VGE = 0V, IC = 150μA
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage
— 0.30 — V/°C VGE = 0V, IC = 1mA (25°C-175°C)
— 1.65 2.14
IC = 48A, VGE = 15V, TJ = 25°C
VCE(on)
Collector-to-Emitter Saturation Voltage
— 2.0 — V IC = 48A, VGE = 15V, TJ = 150°C
— 2.05 —
IC = 48A, VGE = 15V, TJ = 175°C
VGE(th)
Gate Threshold Voltage
4.0 — 6.5 V VCE = VGE, IC = 1.4mA
ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient
— -21 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C)
gfe Forward Transconductance
— 32 — S VCE = 50V, IC = 48A, PW = 80μs
ICES
Collector-to-Emitter Leakage Current
— 1.0 150 μA VGE = 0V, VCE = 600V
— 450 1000
VGE = 0V, VCE = 600V, TJ = 175°C
VFM Diode Forward Voltage Drop
— 1.95 2.91 V IF = 48A
— 1.45 —
IF = 48A, TJ = 175°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V
Ref.Fig
CT6
CT6
5,6,7
9,10,11
9, 10,
11, 12
8
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig
Qg Total Gate Charge (turn-on)
— 95 140
IC = 48A
24
Qge Gate-to-Emitter Charge (turn-on)
— 28 42 nC VGE = 15V
CT1
Qgc Gate-to-Collector Charge (turn-on)
— 35 53
VCC = 400V
Eon Turn-On Switching Loss
— 625 1141
IC = 48A, VCC = 400V, VGE = 15V
CT4
Eoff Turn-Off Switching Loss
— 1275 1481 μJ RG = 10Ω, L = 200μH, LS = 150nH, TJ = 25°C
Etotal
Total Switching Loss
— 1900 2622
Energy losses include tail & diode reverse recovery
td(on)
Turn-On delay time
— 60 78
IC = 48A, VCC = 400V, VGE = 15V
CT4
tr Rise time
— 40 56 ns RG = 10Ω, L = 200μH, LS = 150nH, TJ = 25°C
td(off)
Turn-Off delay time
— 145 176
tf Fall time
— 35 46
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
— 1625 —
— 1585 —
IC = 48A, VCC = 400V, VGE=15V
μJ RG=10Ω, L=200μH, LS=150nH, TJ = 175°C
13, 15
CT4
Etotal
Total Switching Loss
— 3210 —
Energy losses include tail & diode reverse recovery
WF1, WF2
td(on)
Turn-On delay time
— 55 —
IC = 48A, VCC = 400V, VGE = 15V
14, 16
tr Rise time
— 45 — ns RG = 10Ω, L = 200μH, LS = 150nH
CT4
td(off)
Turn-Off delay time
— 165 —
TJ = 175°C
WF1
tf Fall time
— 45 —
WF2
Cies Input Capacitance
— 3025 —
pF VGE = 0V
23
Coes Output Capacitance
— 245 —
VCC = 30V
Cres Reverse Transfer Capacitance
— 90 —
f = 1.0Mhz
TJ = 175°C, IC = 192A
4
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 480V, Vp =600V
CT2
Rg = 10Ω, VGE = +15V to 0V
SCSOA
Short Circuit Safe Operating Area
5 — — μs VCC = 400V, Vp =600V
22, CT3
Rg = 10Ω, VGE = +15V to 0V
WF4
Erec
Reverse Recovery Energy of the Diode
— 845 — μJ TJ = 175°C
17, 18, 19
trr Diode Reverse Recovery Time
— 115 — ns VCC = 400V, IF = 48A
20, 21
Irr Peak Reverse Recovery Current
— 40 — A VGE = 15V, Rg = 10Ω, L =200μH, Ls = 150nH
WF3
Notes:
 VCC = 80% (VCES), VGE = 20V, L = 200μH, RG = 10Ω.
‚ This is only applied to TO-247AC package.
ƒ Pulse width limited by max. junction temperature.
„ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
2 www.irf.com © 2013 International Rectifier
March 15, 2013




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