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Mode MOSFET. SPN3006 Datasheet

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Mode MOSFET. SPN3006 Datasheet






SPN3006 MOSFET. Datasheet pdf. Equivalent




SPN3006 MOSFET. Datasheet pdf. Equivalent





Part

SPN3006

Description

N-Channel Enhancement Mode MOSFET



Feature


SPN3006 N-Channel Enhancement Mode MOSFE T DESCRIPTION The SPN3006 is the N-Chan nel logic enhancement mode power field effect transistors are produced using h igh cell density, DMOS trench technolog y. The SPN3006 has been designed specif ically to improve the overall efficienc y of DC/DC converters using either sync hronous or conventional switching PWM c ontrollers. It has.
Manufacture

SYNC POWER

Datasheet
Download SPN3006 Datasheet


SYNC POWER SPN3006

SPN3006; been optimized for low gate charge, low RDS(ON) and fast switching speed. FEAT URES ‹ ‹ ‹ ‹ ‹ APPLICATIONS z Hig h Frequency Synchronous Buck Converter z DC/DC Power System z Load Switch PIN CONFIGURATION TO-252 30V/30A,RDS(ON)= 4.7mΩ@VGS=10V 30V/15A,RDS(ON)= 7.5m @VGS=4.5V Super high density cell des ign for extremely low RDS (ON) Exceptio nal on-resistance and maxim.


SYNC POWER SPN3006

um DC current capability TO-252 package design PART MARKING 2011/08/22 Ver.2 Page 1 SPN3006 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 S ymbol G S D Description Gate Source Dra in ORDERING INFORMATION Part Number Pa ckage Part Marking SPN3006T252RGB TO-25 2 ※ SPN3006T252RGB : Tape Reel ; Pb Free ; Halogen - Free SPN3006 ABSOU LTE MAXIMUM RATINGS (T.


SYNC POWER SPN3006

A=25℃ Unless otherwise noted) Paramete r Drain-Source Voltage Gate –Source V oltage Continuous Drain Current Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy Power Dissipatio n Operating Junction Temperature Storag e Temperature Range Thermal Resistance- Junction to Ambient (t≦10s) TA=25℃ TA=25℃ TA=100℃ Symbol VDSS VGSS ID IDM IAS EAS PD TJ TSTG RθJA Ty.

Part

SPN3006

Description

N-Channel Enhancement Mode MOSFET



Feature


SPN3006 N-Channel Enhancement Mode MOSFE T DESCRIPTION The SPN3006 is the N-Chan nel logic enhancement mode power field effect transistors are produced using h igh cell density, DMOS trench technolog y. The SPN3006 has been designed specif ically to improve the overall efficienc y of DC/DC converters using either sync hronous or conventional switching PWM c ontrollers. It has.
Manufacture

SYNC POWER

Datasheet
Download SPN3006 Datasheet




 SPN3006
SPN3006
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN3006 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density, DMOS trench technology. The SPN3006 has
been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous
or conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.
APPLICATIONS
High Frequency Synchronous Buck Converter
DC/DC Power System
Load Switch
FEATURES
30V/80A,RDS(ON)=4.7mΩ@VGS=10V
30V/80A,RDS(ON)=7.5mΩ@VGS=4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TO-252/TO-251 package design
PIN CONFIGURATION
TO-252-2L
TO-251S-3L
PART MARKING
2019/02/20 Ver 5
Page 1




 SPN3006
SPN3006
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
D
S
Description
Gate
Drain
Source
ORDERING INFORMATION
Part Number
Package
SPN3006ST251TGB
TO-251S-3L
SPN3006T252RGB
TO-252-2L
SPN3006T252RGB : Tape Reel ; Pb Free ; Halogen - Free
SPN3006ST251TGB: Tube ; PbFree; HalogenFree
Part Marking
SPN3006
SPN3006
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current
TA=25℃
TA=100
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
Power Dissipation
TA=25℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient (t10s)
Symbol
VDSS
VGSS
ID
IDM
IAS
EAS
PD
TJ
TSTG
RθJA
Typical
30
±20
80
57
160
48
259
2
150
-55/150
62
Unit
V
V
A
A
A
mJ
W
℃/W
2019/02/20 Ver 5
Page 2




 SPN3006
SPN3006
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Single Pulse Avalanche Energy
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
VDS=24V,VGS=0V
IDSS VDS=24V,VGS=0V, TJ=55
ID(on) VDS5V,VGS =10V
RDS(on)
VGS= 10V,ID=30A
VGS=4.5V,ID=15A
gfs VDS=5V,ID=30A
VSD
EAS
IS=1A,VGS =0V
VDD=25V, L=0.1mH,
IAS=24A
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=15V,VGS=4.5V
ID=20A
VDS=24V,VGS=0V
f=1MHz
VDD=15V,
ID=15A,VGEN=10V
RG=3.3Ω
Min.
30
1.0
60
Typ Max. Unit
2.5
±100
1
5
V
nA
uA
80 A
4.7
7.5
5.5
9
mΩ
22 S
1V
mJ
11.1
1.85
6.8
1210
190
100
7.5
14.5
35.2
9.6
18
3.8
12
1800
280
150
14
28
67
18
nC
pF
nS
2019/02/20 Ver 5
Page 3



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