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PMDT290UNE

NXP
Part Number PMDT290UNE
Manufacturer NXP
Description 800mA dual N-channel Trench MOSFET
Published Aug 17, 2014
Detailed Description SO T6 PMDT290UNE 20 V, 800 mA dual N-channel Trench MOSFET Rev. 1 — 13 September 2011 Product data sheet 1. Product pr...
Datasheet PDF File PMDT290UNE PDF File

PMDT290UNE
PMDT290UNE

Overview
SO T6 PMDT290UNE 20 V, 800 mA dual N-channel Trench MOSFET Rev.
1 — 13 September 2011 Product data sheet 1.
Product profile 1.
1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
66 1.
2 Features and benefits  Very fast switching  Trench MOSFET technology  ESD protection up to 2 kV  AEC-Q101 qualified 1.
3 Applications  Relay driver  High-speed line driver  Low-side loadswitch  Switching circuits 1.
4 Quick reference data Table 1.
Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source ...


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