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DMN63D8LDW

Diodes Incorporated

Dual N-Channel MOSFET


Description
NEW PRODUCT Product Summary BVDSS 30V RDS(ON) 4.2Ω @ VGS = 4.5V 2.8Ω @ VGS = 10V ID TA = +25°C 200mA 260mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  DC-DC Converters ...



Diodes Incorporated

DMN63D8LDW

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