K1588 Datasheet: 2SK1588





K1588 2SK1588 Datasheet

Part Number K1588
Description 2SK1588
Manufacture NEC
Total Page 4 Pages
PDF Download Download K1588 Datasheet PDF

Features: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1588 N-CHANNEL MOSFET FOR SWITCHIN G DESCRIPTION The 2SK1588 is an N-chan nel vertical type MOSFET which can be d riven by 2.5 V power supply. As the MOS FET is driven by low voltage and does n ot require consideration of driving cur rent, it is suitable for appliances inc luding VCR cameras and headphone stereo s PACKAGE DRAWING (Unit: mm) 4.5 ±0.1 1.6 ±0.2 1.5 ±0.1 2.5 ±0.1 0.42 ± 0.06 which need power saving. FEATURE S • Directly driven by ICs having a 3 V power supply. • Low on-state resis tance RDS(on)1 = 0.5 Ω MAX. (VGS = 2.5 V, ID = 1.0 A) RDS(on)2 = 0.3 Ω MAX. (VGS = 4.0 V, ID = 1.5 A) 1 0.42 ±0.0 6 2 3 0.47 ±0.06 1.5 TYP. 3.0 TYP. 0.8 MIN. 4.0 ±0.25 0.41 +0.03 –0. 05 ORDERING INFORMATION PART NUMBER 2S K1588 PACKAGE SC-62 (Power Mini Mold) 1. Source 2. Drain 3. Gate Marking: NG ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Ga te to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 .

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1588
N-CHANNEL MOSFET
FOR SWITCHING
DESCRIPTION
The 2SK1588 is an N-channel vertical type MOSFET which
can be driven by 2.5 V power supply.
As the MOSFET is driven by low voltage and does not
require consideration of driving current, it is suitable for
appliances including VCR cameras and headphone stereos
which need power saving.
FEATURES
• Directly driven by ICs having a 3 V power supply.
• Low on-state resistance
RDS(on)1 = 0.5 Ω MAX. (VGS = 2.5 V, ID = 1.0 A)
RDS(on)2 = 0.3 Ω MAX. (VGS = 4.0 V, ID = 1.5 A)
ORDERING INFORMATION
PART NUMBER
2SK1588
Marking: NG
PACKAGE
SC-62 (Power Mini Mold)
PACKAGE DRAWING (Unit: mm)
4.5 ±0.1
1.6 ±0.2
1.5 ±0.1
0.42
±0.06
1
2
3
0.42
±0.06
0.47
±0.06
1.5 TYP.
3.0 TYP.
0.41
+0.03
–0.05
1. Source
2. Drain
3. Gate
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation Note2
ID(DC)
ID(pulse)
PT
Channel Temperature
Tch
Storage Temperature
Tstg
16
±16
±3.0
±6.0
2.0
150
55 to +150
V
V
A
A
W
°C
°C
Notes 1. PW 10 ms, Duty Cycle 50%
2. Mounted on ceramic substrate of 16 cm2 x 0.7 mm
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17810EJ3V0DS00 (3rd edition)
(Previous No. TC-2352A)
Date Published November 2005 NS CP(K)
Printed in Japan
1991

           






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