MOS FIELD EFFECT TRANSISTOR
The 2SK1588 is an N-channel vertical type MOSFET which
can be driven by 2.5 V power supply.
As the MOSFET is driven by low voltage and does not
require consideration of driving current, it is suitable for
appliances including VCR cameras and headphone stereos
which need power saving.
• Directly driven by ICs having a 3 V power supply.
• Low on-state resistance
RDS(on)1 = 0.5 Ω MAX. (VGS = 2.5 V, ID = 1.0 A)
RDS(on)2 = 0.3 Ω MAX. (VGS = 4.0 V, ID = 1.5 A)
SC-62 (Power Mini Mold)
PACKAGE DRAWING (Unit: mm)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation Note2
−55 to +150
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%
2. Mounted on ceramic substrate of 16 cm2 x 0.7 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17810EJ3V0DS00 (3rd edition)
(Previous No. TC-2352A)
Date Published November 2005 NS CP(K)
Printed in Japan