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TK55S10N1

Toshiba Semiconductor

N-Channel MOSFET


Description
MOSFETs Silicon N-channel MOS (U-MOS-H) TK55S10N1 1. Applications Automotive Switching Voltage Regulators Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 5.5 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) ...



Toshiba Semiconductor

TK55S10N1

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