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TK31V60W

Toshiba Semiconductor
Part Number TK31V60W
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 6, 2014
Detailed Description TK31V60W MOSFETs Silicon N-Channel MOS (DTMOS) TK31V60W 1. Applications • Switching Voltage Regulators 2. Features (1...
Datasheet PDF File TK31V60W PDF File

TK31V60W
TK31V60W

Overview
TK31V60W MOSFETs Silicon N-Channel MOS (DTMOS) TK31V60W 1.
Applications • Switching Voltage Regulators 2.
Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.
078 Ω (typ.
) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.
7 to 3.
7 V (VDS = 10 V, ID = 1.
5 mA) 3.
Packaging and Internal Circuit 1: Gate 2: Source1 3,4: Source2 5: Drain (Heatsink) Notice: Please use the source1 pin for gate input signal return.
Make sure that the main current flows into the source2 pins.
DFN8x8 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Dra...


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