TK31V60W MOSFETs Datasheet

TK31V60W Datasheet, PDF, Equivalent


Part Number

TK31V60W

Description

MOSFETs

Manufacture

Toshiba Semiconductor

Total Page 10 Pages
Datasheet
Download TK31V60W Datasheet


TK31V60W
MOSFETs Silicon N-Channel MOS (DTMOS)
TK31V60W
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.078 (typ.)
by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching
(3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA)
3. Packaging and Internal Circuit
TK31V60W
DFN8x8
1: Gate
2: Source1
3,4: Source2
5: Drain (Heatsink)
Notice:
Please use the source1 pin for
gate input signal return. Make
sure that the main current flows
into the source2 pins.
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 600 V
Gate-source voltage
VGSS
±30
Drain current (DC)
(Note 1)
ID
30.8 A
Drain current (pulsed)
(Note 1)
IDP
123
Power dissipation
(Tc = 25)
PD 240 W
Single-pulse avalanche energy
(Note 2)
EAS
338 mJ
Avalanche current
IAR 7.7 A
Reverse drain current (DC)
(Note 1)
IDR
30.8
Reverse drain current (pulsed)
(Note 1)
IDRP
123
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2013-06
1 2014-02-25
Rev.2.0

TK31V60W
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25(initial), L = 10 mH, RG = 25 , IAR = 7.7 A
TK31V60W
Symbol
Rth(ch-c)
Max Unit
0.52 /W
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2 2014-02-25
Rev.2.0


Features TK31V60W MOSFETs Silicon N-Channel MOS ( DTMOS) TK31V60W 1. Applications • Switching Voltage Regulators 2. Featu res (1) (2) (3) Low drain-source on-res istance: RDS(ON) = 0.078 Ω (typ.) by used to Super Junction Structure : DTMO S Easy to control Gate switching Enhanc ement mode: Vth = 2.7 to 3.7 V (VDS = 1 0 V, ID = 1.5 mA) 3. Packaging and Int ernal Circuit 1: Gate 2: Source1 3,4: Source2 5: Drain (Heatsink) Notice: Ple ase use the source1 pin for gate input signal return. Make sure that the main current flows into the source2 pins. D FN8x8 4. Absolute Maximum Ratings (Not e) (Ta = 25 unless otherwise specifi ed) Characteristics Drain-source voltag e Gate-source voltage Drain current (DC ) Drain current (pulsed) Power dissipat ion Single-pulse avalanche energy Avala nche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature (Note 1) (Note 1) (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR IDR IDRP Tch Tstg Rating .
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