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TK100A06N1
MOSFETs
Description
TK100A06N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK100A06N1 1. Applications Switching Voltage
Regulator
s 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1: ...
Toshiba Semiconductor
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TK100A06N1
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