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TK9A20DA

Toshiba Semiconductor
Part Number TK9A20DA
Manufacturer Toshiba Semiconductor
Description Silicon N-channel MOSFET
Published Sep 11, 2014
Detailed Description MOSFETs Silicon N-Channel MOS (π-MOS) TK9A20DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain...
Datasheet PDF File TK9A20DA PDF File

TK9A20DA
TK9A20DA

Overview
MOSFETs Silicon N-Channel MOS (π-MOS) TK9A20DA 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 0.
26 Ω (typ.
) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (3) Enhancement mode: Vth = 1.
5 to 3.
5 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit TK9A20DA 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 200 V Gate-source voltage VGSS ±20 Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC...


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