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PHOTOTRANSISTOR PHOTOCOUPLER. EL357N Datasheet

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PHOTOTRANSISTOR PHOTOCOUPLER. EL357N Datasheet
















EL357N PHOTOCOUPLER. Datasheet pdf. Equivalent













Part

EL357N

Description

4 PIN ULTRA SMALL SOP PHOTOTRANSISTOR PHOTOCOUPLER



Feature


4 PIN ULTRA SMALL SOP PHOTOTRANSISTOR PH OTOCOUPLER Features: • Halogens free • Current transfer ratio (CTR: 50~600 % at IF =5mA, VCE =5V) • High isolati on voltage between input and output (Vi so=3750 V rms ) • Compact 4 Pin SOP w ith a 2.0 mm profile • Pb free and Ro HS compliant. • UL approved (No. E214 129) • VDE approved (No. 132249) • SEMKO approved • NEMKO approved • .
Manufacture

Everlight Electronics

Datasheet
Download EL357N Datasheet


Everlight Electronics EL357N

EL357N; DEMKO approved • FIMKO approved • CS A approved (No. 1408633) EL357N-G Seri es Schematic Description The EL357N-G series contains an infrared emitting d iode, optically coupled to a phototrans istor detector. The devices in a 4-pin small outline SMD package. Pin Configur ation 1. Anode 2. Cathode 3. Emitter 4. Collector Applications • DC-DC Conv erters • Programmable co.


Everlight Electronics EL357N

ntrollers • Telecommunication equipmen ts • Signal transmission between circ uits of different potentials and impeda nces Everlight Electronics Co., Ltd. D ocument No DPC-0000014 1 Rev. 4 http: //www.everlight.com December 28, 2009 Revision :4 --http://oneic.com/ Relea se Date:2010-01-15 13:27:26.0 Expired P eriod: Forever LifecyclePhase: 4 PIN ULTRA SMALL SOP PHOTOT.


Everlight Electronics EL357N

RANSISTOR PHOTOCOUPLER Absolute Maximum Ratings (Ta=25°C) Parameter Forward cu rrent Peak forward current (1us, pulse) Input Reverse voltage Power dissipatio n Symbol IF IFP VR EL357N-G Series Ra ting 50 1 6 70 Unit mA A V mW mW/°C m W mW/°C mA V V mW V rms °C °C °C D erating factor (about Ta=100°C) Power dissipation PD 2.9 150 PC 3.7 IC VCEO VECO PTOT VISO TOPR TSTG .





Part

EL357N

Description

4 PIN ULTRA SMALL SOP PHOTOTRANSISTOR PHOTOCOUPLER



Feature


4 PIN ULTRA SMALL SOP PHOTOTRANSISTOR PH OTOCOUPLER Features: • Halogens free • Current transfer ratio (CTR: 50~600 % at IF =5mA, VCE =5V) • High isolati on voltage between input and output (Vi so=3750 V rms ) • Compact 4 Pin SOP w ith a 2.0 mm profile • Pb free and Ro HS compliant. • UL approved (No. E214 129) • VDE approved (No. 132249) • SEMKO approved • NEMKO approved • .
Manufacture

Everlight Electronics

Datasheet
Download EL357N Datasheet




 EL357N
4 PIN ULTRA SMALL SOP
PHOTOTRANSISTOR PHOTOCOUPLER
EL357N-G Series
Features:
Halogens free
Current transfer ratio
(CTR: 50~600% at IF =5mA, VCE =5V)
High isolation voltage between input
and output (Viso=3750 V rms )
Compact 4 Pin SOP with a 2.0 mm profile
Pb free and RoHS compliant.
UL approved (No. E214129)
VDE approved (No. 132249)
SEMKO approved
NEMKO approved
DEMKO approved
FIMKO approved
CSA approved (No. 1408633)
Description
The EL357N-G series contains an infrared emitting diode,
optically coupled to a phototransistor detector.
The devices in a 4-pin small outline SMD package.
Applications
DC-DC Converters
Programmable controllers
Telecommunication equipments
Signal transmission between circuits of different potentials and impedances
Schematic
Pin Configuration
1. Anode
2. Cathode
3. Emitter
4. Collector
Everlight Electronics Co., Ltd.
Document No DPC-0000014
Revision : 4
Rev. 4
LifecyclePhase:
芯天下--http://oneic.com/
1
http://www.everlight.com
December 28, 2009
Release Date:2010-01-15 13:27:26.0
Expired Period: Forever




 EL357N
4 PIN ULTRA SMALL SOP
PHOTOTRANSISTOR PHOTOCOUPLER
EL357N-G Series
Absolute Maximum Ratings (Ta=25°C)
Input
Parameter
Forward current
Peak forward current (1us, pulse)
Reverse voltage
Power dissipation
Derating factor (about Ta=100°C)
Power dissipation
Derating factor (about Ta=80°C)
Output
Collector current
Collector-Emitter voltage
Emitter-Collector voltage
Total power dissipation
Isolation voltage *1
Operating temperature
Storage temperature
Soldering temperature *2
Symbol
IF
IFP
VR
PD
PC
IC
VCEO
VECO
PTOT
VISO
TOPR
TSTG
TSOL
Rating
50
1
6
70
2.9
150
3.7
50
80
7
200
3750
-55 ~ +110
-55 ~ +125
260
Unit
mA
A
V
mW
mW/°C
mW
mW/°C
mA
V
V
mW
V rms
°C
°C
°C
Notes
*1 AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1 & 2 are shorted together, and pins 3 & 4
are shorted together.
*2 For 10 seconds.
Everlight Electronics Co., Ltd.
Document No DPC-0000014
Revision : 4
Rev. 4
LifecyclePhase:
芯天下--http://oneic.com/
2
http://www.everlight.com
December 28, 2009
Release Date:2010-01-15 13:27:26.0
Expired Period: Forever




 EL357N
4 PIN ULTRA SMALL SOP
PHOTOTRANSISTOR PHOTOCOUPLER
EL357N-G Series
Electrical Characteristics (Ta=25°C unless specified otherwise)
Input
Parameter
Forward voltage
Reverse current
Input capacitance
Symbol
VF
IR
Cin
Min.
-
-
-
Typ.*
1.2
-
30
Max.
1.4
10
250
Unit Condition
V IF = 20mA
µA VR = 4V
pF V = 0, f = 1kHz
Output
Parameter
Collector-Emitter dark
current
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
Symbol Min.
ICEO
-
BVCEO
BVECO
80
7
Typ.*
-
-
-
Max.
100
-
-
Unit Condition
nA VCE = 20V, IF = 0mA
V IC = 0.1mA
V IE = 0.01mA
Transfer Characteristics (Ta=25°C unless specified otherwise)
Parameter
Symbol Min.
Typ.*
Max.
Unit
Condition
EL357N
50 - 600
EL357NA
80 - 160
Current
Transfer ratio
EL357NB
EL357NC
EL357ND
CTR
130
200
300
-
-
-
260
400 % IF = 5mA ,VCE = 5V
600
EL357NE
100 -
200
EL357NF
150 -
300
Collector-Emitter
saturation voltage
VCE(sat)
Isolation resistance
Floating capacitance
Cut-off frequency
RIO
CIO
fc
Rise time
Fall time
* Typical values at Ta = 25°C
tr
tf
-
5× 1010
-
-
-
-
0.1
-
0.6
80
3
4
0.2 V IF = 20mA ,IC = 1mA
-
VIO = 500Vdc,
40~60% R.H.
1.0 pF VIO = 0, f = 1MHz
-
VCE = 5V, IC = 2mA
kHz RL = 100, -3dB
18 µs VCE = 2V, IC = 2mA,
18 µs RL = 100
Everlight Electronics Co., Ltd.
Document No DPC-0000014
Revision : 4
Rev. 4
LifecyclePhase:
芯天下--http://oneic.com/
3
http://www.everlight.com
December 28, 2009
Release Date:2010-01-15 13:27:26.0
Expired Period: Forever




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