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SSM6J502NU

Toshiba Semiconductor
Part Number SSM6J502NU
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Sep 14, 2014
Detailed Description MOSFETs Silicon P-Channel MOS (U-MOS�) SSM6J502NU 1. Applications • Power Management Switches 2. Features (1) 1.5-V driv...
Datasheet PDF File SSM6J502NU PDF File

SSM6J502NU
SSM6J502NU

Overview
MOSFETs Silicon P-Channel MOS (U-MOS�) SSM6J502NU 1.
Applications • Power Management Switches 2.
Features (1) 1.
5-V drive (2) Low drain-source on-resistance : RDS(ON) = 60.
5 mΩ (max) (@VGS = -1.
5 V) RDS(ON) = 38.
4 mΩ (max) (@VGS = -1.
8 V) RDS(ON) = 28.
3 mΩ (max) (@VGS = -2.
5 V) RDS(ON) = 23.
1 mΩ (max) (@VGS = -4.
5 V) 3.
Packaging and Internal Circuit UDFN6B SSM6J502NU 1,2,5,6: Drain 3: Gate 4: Source ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2010-11 2021-11-30 Rev.
2.
0 SSM6J502NU 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS ...


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