SSM4957(G)M
DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Simple drive requirement Lower gate charge Fast switching characteristics
D1 D2 D1
D2
BV DSS R DS(ON) ID
G2 S2
-30V 24mΩ -7.7A
SO-8
G1 S1
Description
Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-r...
