SSM6N25TU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
SSM6N25TU
High Speed Switching Applications
Optimum for high-density mounting in small packages
Low on-resistance:
Ron = 395mΩ (max) (@VGS = 1.8 V) Ron = 190mΩ (max) (@VGS = 2.5 V) Ron = 145mΩ (max) (@VGS = 4.0 V)
Unit: mm 2.1±0.1 1.7±0.1
+0.1 0.3-0.05
2.0±0.1 1.3±0.1 ...
