N-Channel Enhancement Mode Field Effect Transistor
Description
S amHop Microelectronics C orp.
S T S 2306
Apr,21 2005 ver1.2
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
20V
F E AT UR E S
( m £[ ) Max
ID
2.8A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
45 @ V G S = 4.5V 60 @ V G S =2.5V
R ugged and reliable. S OT-23 package.
D
S OT-23
D S G
G
S
ABS OLUTE M...
