ST I S 3405
S ep.15 2005
P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S ID
-3A
F E AT UR E S
( m W ) Max
R DS (ON)
S uper high dense cell design for low R DS (ON ).
-30V
100 @ V G S = -10V 130 @ V G S = -4.5V
R ugged and reliable. S OT-23 P ackage.
D
S OT-23
D S G
G
S
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless ...
