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AP9410GH-HF

Part Number	AP9410GH-HF
Manufacturer	Advanced Power Electronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Sep 15, 2014
Detailed Description	AP9410GH-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast...
Datasheet	AP9410GH-HF PDF File

Overview

AP9410GH-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 6mΩ 75A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on□ resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as C/DC converters.
G D S TO-252(H) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 4.
5V Continuous Drain Current, V GS @ 4.
5V Pulsed Drain Current 1 4 Rating 30 +12 75 61 300 89.
2 Units V V A A A W W ℃ ℃ Total Power Dissipation Total Power Dissipation 3 2 -55 to 150 -55 to 150 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 1.
4 62.
5 Units ℃/W ℃/W 1 201202153 Data & specifications subject to change without notice AP9410GH-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 2 o Test Conditions VGS=0V, ID=250uA VGS=4.
5V, ID=20A VGS=2.
5V, ID=10A VDS=VGS, ID=250uA VDS=4V, ID=20A VDS=30V, VGS=0V VGS=+12V, VDS=0V ID=20A VDS=24V VGS=4.
5V VDS=15V ID=20A RG=1.
8Ω VGS=10V VGS=0V VDS=25V f=1.
0MHz Min.
30 0.
5 - Typ.
70 57 8 24 12 52 57 10 620 365 Max.
Units 6 8 1.
5 10 +100 90 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF p...

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AP9410GH-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

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