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AP9412BGM

Advanced Power Electronics
Part Number AP9412BGM
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 15, 2014
Detailed Description AP9412BGM RoHS-compliant Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast...
Datasheet PDF File AP9412BGM PDF File

AP9412BGM
AP9412BGM

Overview
AP9412BGM RoHS-compliant Product Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic D D D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G 30V 6mΩ 18A ID SO-8 S S S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 +20 18 15 50 2.
5 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 50 Unit ℃/W 1 201203072 Data and specifications subject to change without notice AP9412BGM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=1mA VGS=10V, ID=14A VGS=4.
5V, ID=10A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Min.
30 1 - Typ.
14 26 4.
6 16 10 7 36 20 450 295 Max.
Units 6 8 2.
5 1 100 +100 42 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF VDS=VGS, ID=250uA VDS=10V, ID=14A VDS=30V, VGS=0V VGS=+20V, VDS=0V ID=14A VDS=24V VGS=4.
5V VDS=15V ID=1A RG=3.
3Ω,VGS=10V RD=15Ω VGS=0V VDS=25V f=1.
0MHz Drain-Source Leakage Current (Tj=70 C) VDS=24V, VGS=0V Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Tim...


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