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SSM6G18NU
Silicon Epitaxial Schottky Barrier Diode
Description
Composite Devices Silicon P-Channel MOS / Epitaxial
Schottky
Barrier SSM6G18NU SSM6G18NU 1. Applications Power Management Switches 2. Features (1) Combined a P-channel MOSFET and a
Schottky
barrier diode in one package. 2.1. MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 261 mΩ (max) (VGS = -1.5 V) RDS(ON) = 185 mΩ (max) (VGS = -1.8 V) RD...
Toshiba Semiconductor
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SSM6G18NU
Silicon Epitaxial Schottky Barrier Diode
- Toshiba Semiconductor
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