YG838C03R Datasheet: SCHOTTKY BARRIER DIODE





YG838C03R SCHOTTKY BARRIER DIODE Datasheet

Part Number YG838C03R
Description SCHOTTKY BARRIER DIODE
Manufacture Fuji Electric
Total Page 3 Pages
PDF Download Download YG838C03R Datasheet PDF

Features: YG838C03R (38A) SCHOTTKY BARRIER DIODE T O-220F (30V / 38A ) Outline drawings, mm Type name Polarity mark Features L ow VF Super high speed switching High r eliability by planer design Connection diagram Applications High speed power switching 1 2 3 Maximum ratings and c haracteristics Absolute maximum ratings Item Repetitive peak reverse voltage R epetitive peak surgereverse voltage Ave rage output current Surge current Opera ting junction temperature Storage tempe rature Symbol VRRM VRSM Io IFSM Tj Tstg tw=500ns, duty=1/40 Square wave, duty= 1/2 Tc=85°C Sine wave 10ms Conditions Rating 30 35 38* 200 -40 to +150 -40 to +150 Unit V V A A °C °C * Average f orward current of centertap full wave c onnection Electrical characteristics ( Ta=25°C Unless otherwise specified ) I tem Forward voltage drop Reverse curren t Thermal resistance Symbol VFM IRRM Rt h(j-c) Conditions IFM=12.5A VR=VRRM Jun ction to case Max. 0.45 10 2.0 Unit V m A °C/W (30V / 38A ) Characteristics Forward Characteristic (typ.) .

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YG838C03R (38A)
SCHOTTKY BARRIER DIODE
(30V / 38A )
Outline drawings, mm
TO-220F
Type name
Polarity mark
Features
Low VF
Super high speed switching
High reliability by planer design
Connection diagram
Applications
High speed power switching
1 23
Maximum ratings and characteristics
Absolute maximum ratings
Item
Symbol
Conditions
Rating
Unit
Repetitive peak reverse voltage
VRRM
30 V
Repetitive peak surgereverse voltage VRSM
Average output current
Io
Surge current
IFSM
Operating junction temperature
Tj
tw=500ns, duty=1/40
Square wave, duty=1/2
Tc=85°C
Sine wave
10ms
35
38*
200
-40 to +150
V
A
A
°C
Storage temperature
Tstg
-40 to +150
°C
* Average forward current of centertap full wave connection
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Symbol
Conditions
Forward voltage drop
VFM IFM=12.5A
Max.
0.45
Unit
V
Reverse current
IRRM
VR=VRRM
10 mA
Thermal resistance
Rth(j-c)
Junction to case
2.0 °C/W

        






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