BARRIER DIODE. YG835C03R Datasheet

YG835C03R Datasheet PDF, Equivalent


Part Number

YG835C03R

Description

SCHOTTKY BARRIER DIODE

Manufacture

Fuji Electric

Total Page 3 Pages
PDF Download
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YG835C03R Datasheet
YG835C03R
SCHOTTKY BARRIER DIODE
(30V / 25A TO-22OF15)
Outline Drawings
10±0.5
+0.2
ø3.2 -0.1
4.5±0.2
2.7±0.2
1.2±0.2
Features
Low VF
Super high speed switching.
High reliability by planer design.
Applications
High speed power switching.
0.7±0.2
2.54±0.2
+0.2
0.6 -0
2.7±0.2
JEDEC
EIAJ
SC-67
Connection Diagram
2
Maximum Ratings and Characteristics
Absolute Maximum Ratings
1
3
Item
Symbol
Conditions
Rating
Unit
Repetitive peak reverse voltage
VRRM
30 V
Repetitive peak surge reverse voltage
Isolating voltage
Average output current
Suege current
VRSM
Viso
IO
IFSM
tw=500ns, duty=1/40
Terminals to Case,
AC. 1min.
duty=1/2, Tc=99°C
Square wave
Sine wave 10ms
30
1500
25*
120
V
V
A
A
Operating junction temperature
Tj
+150
°C
Storage temperature
Tstg
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Item
Symbol
Conditions
-40 to +150
°C
* Out put current of centertap full wave connection.
Max.
Unit
Forward voltage drop **
VF IF=6.0A
0.45 V
Reverse current **
IR VR=VRRM
15.0 mA
Thermal resistance
Mechanical Characteristics
Rth(j-c)
Junction to case
2.5 °C/W
** Rating per element
Mounting torque
Weight
Recommended torque
0.3 to 0.5
2.0
N·m
g
A-456

YG835C03R Datasheet
(30V / 25A TO-22OF15)
Characteristics
Forward Characteristic (typ.)
100
10
Tj=150°C
Tj=125°C
1
Tj=100°C
Tj=25°C
0.1
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VF Forward Voltage (V)
Forward Power Dissipation
17
16
Io
15
14 λ
13 360°
12
11
Square wave λ=60°
10 Square wave λ=120°
9 Sine wave λ=180°
8 Square wave λ=180°
7 DC
6
5
4
3
2
1 Per 1element
0
0 1 2 3 4 5 6 7 8 9 10 11 12
Io Average Forward Current (A)
Current Derating (Io-Tc)
160
150
140
130
120 DC
110
100 Sine wave λ=180°
90 Square wave λ=180°
80
70
360°
60 λ
Io
50
VR=20V
40
Square wave λ=120°
Square wave λ=60°
30
20
0
5 10 15 20 25 30
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
35
YG835C03R
103
102
101
100
10-1
10-2
10-3
0
Reverse Characteristic (typ.)
Tj=150°C
Tj=125°C
Tj=100°C
Tj= 25°C
10 20 30
VR Reverse Voltage (V)
40
50
Reverse Power Dissipation
16
15
360°
14
DC
13 VR
12
11 α
10
9
8 α=180°
7
6
5
4
3
2
1
0
0 5 10 15 20 25 30 35 40 45
VR Reverse Voltage (V)
Junction Capacitance Characteristic (typ.)
10000
1000
100
10
1
10 100
VR Reverse Voltage (V)


Features Datasheet pdf YG835C03R SCHOTTKY BARRIER DIODE (30V / 25A TO-22OF15) Outline Drawings 10±0. 5 ø3.2 +0.2 -0.1 4.5±0.2 2.7±0.2 6. 3 2.7±0.2 3.7±0.2 1.2±0.2 13Min F eatures Low VF Super high speed switchi ng. High reliability by planer design. 15±0.3 0.7±0.2 2.54±0.2 0.6 +0.2 -0 2.7±0.2 JEDEC EIAJ SC-67 Appli cations High speed power switching. Co nnection Diagram 2 1 3 Maximum Ratings and Characteristics Absolute Maximum R atings Item Repetitive peak reverse vol tage Repetitive peak surge reverse volt age Isolating voltage Average output cu rrent Suege current Operating junction temperature Storage temperature Symbol VRRM VRSM Viso IO IFSM Tj Tstg tw=500ns , duty=1/40 Terminals to Case, AC. 1min . duty=1/2, Tc=99°C Square wave Sine w ave 10ms Conditions Rating 30 30 1500 25* 120 +150 -40 to +150 Unit V V V A A °C °C Electrical Characteristics ( Ta=25°C Unless otherwise specified ) I tem Forward voltage drop ** Reverse cur rent ** Thermal resistance Symbol VF IR Rth(j-c) Conditions IF=6.0A VR=VRRM Ju.
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