BARRIER DIODE. YG811S09R Datasheet

YG811S09R Datasheet PDF, Equivalent


Part Number

YG811S09R

Description

SCHOTTKY BARRIER DIODE

Manufacture

Fuji Electric

Total Page 3 Pages
PDF Download
Download YG811S09R Datasheet PDF


YG811S09R Datasheet
YG811S09R
SCHOTTKY BARRIER DIODE
(90V / 5A TO-22OF15)
Outline Drawings
10.5±0.5
ø3.2
+0.2
-0.1
4.5±0.2
2.7±0.2
Features
Low VF
Super high speed switching.
High reliability by planer design.
Applications
High speed power switching.
Maximum Ratings and Characteristics
Absolute Maximum Ratings
1.2±0.2
0.7±0.2
5.08±0.4
JEDEC
EIAJ
0.6±0.2
2.7±0.2
SC-67
Connection Diagram
13
Item
Symbol
Conditions
Rating
Repetitive peak reverse voltage
VRRM
90
Repetitive peak surge reverse voltage
Isolation voltage
Average output current
Surge current
VRSM
Viso
IO
IFSM
tw=500ns, duty=1/40
Terminals to Case,
AC. 1min.
duty=1/2, Tc=116°C
Rectangl wave
Sine wave 10ms
100
1500
5
80
Operating junction temperature
Tj
-40 to +150
Storage temperature
Tstg
-40 to +150
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Item
Symbol
Conditions
Forward voltage drop
VF IF=4.0A
Reverse current
IR VR=VRRM
Thermal resistance
Rth(j-c)
Junction to case
Mechanical Characteristics
Max.
0.9
5.0
5.0
Mounting torque
Weight
Recommended torque
0.3 to 0.5
2.3
Unit
V
V
V
A
A
°C
°C
Unit
V
mA
°C/W
N·m
g

YG811S09R Datasheet
(90V / 5A TO-22OF15)
Characteristics
Forward Characteristic (typ.)
10 Tj=150 o C
Tj=125 o C
Tj=100 o C
1
Tj=25 o C
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF Forward Voltage (V)
Forward Power Dissipation
8
Io
7
λ
6
360°
5
Square wave λ=60o
4
Square wave λ=120o
Sine wave λ=180o
Square wave λ=180o
3 DC
2
1
Per 1element
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Io Average Forward Current (A)
Current Derating (Io-Tc)
160
150
140
130 DC
120
110
100
90
80
360°
λ
Io
VR=50V
Sine wave λ=180o
Square wave λ=180o
Square wave λ=120o
Square wave λ=60o
70
01234567
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
8
YG811S09R
Reverse Characteristic (typ.)
102
101
100
Tj=150 oC
Tj=125 oC
Tj=100oC
10-1
10-2
Tj=25oC
10-3
0
10 20 30 40 50 60 70 80 90 100 110
VR Reverse Voltage (V)
Reverse Power Dissipation
20
18
360°
16
VR
14
α
12
DC
10 α=180o
8
6
4
2
0
0 10 20 30 40 50 60 70 80 90 100
VR Reverse Voltage (V)
Junction Capacitance Characteristic
(typ.)
1000
100
10
10
100
VR Reverse Voltage (V)


Features Datasheet pdf YG811S09R SCHOTTKY BARRIER DIODE (90V / 5A TO-22OF15) Outline Drawings 10.5±0 .5 ø3.2 +0.2 -0.1 4.5±0.2 2.7±0.2 6 .3 2.7±0.2 Features Low VF Super hig h speed switching. High reliability by planer design. 3.7±0.2 1.2±0.2 13Mi n 0.7±0.2 15±0.3 0.6±0.2 2.7±0.2 5.08±0.4 Applications High speed pow er switching. JEDEC EIAJ SC-67 Conne ction Diagram 1 3 Maximum Ratings and Characteristics Absolute Maximum Rating s Item Repetitive peak reverse voltage Repetitive peak surge reverse voltage I solation voltage Average output current Surge current Operating junction tempe rature Storage temperature Symbol VRRM VRSM Viso IO IFSM Tj Tstg Conditions R ating 90 Unit V V V A A °C °C tw=50 0ns, duty=1/40 Terminals to Case, AC. 1 min. duty=1/2, Tc=116°C Rectangl wave Sine wave 10ms 100 1500 5 80 -40 to +1 50 -40 to +150 Electrical Characterist ics (Ta=25°C Unless otherwise specifie d ) Item Forward voltage drop Reverse c urrent Thermal resistance Symbol VF IR Rth(j-c) Conditions IF=4.0A VR=VRRM Junc.
Keywords YG811S09R, datasheet, pdf, Fuji Electric, SCHOTTKY, BARRIER, DIODE, G811S09R, 811S09R, 11S09R, YG811S09, YG811S0, YG811S, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)