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D818

Silicon NPN Power Transistor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD818 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min.) ·Low Collector Saturation Voltage·High Switching Speed APPLICATIONS ·Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.cnSYMBOL PARAMETER MAX UNIT ...

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