GT15J321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT15J321
High Power Switching Applications Fast Switching Applications
Unit: mm
The 4th generation FS (fast switching) Enhancement-mode High speed: tf = 0.03 µs (typ.) Low saturation Voltage: VCE (sat) = 1.90 V (typ.) FRD included between emitter and collector.
Maximum ...
