K2267 Datasheet: 2SK2267





K2267 2SK2267 Datasheet

Part Number K2267
Description 2SK2267
Manufacture Toshiba Semiconductor
Total Page 6 Pages
PDF Download Download K2267 Datasheet PDF

Features: 2SK2267 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−M OSV) 2SK2267 Chopper Regulator, DC−D C Converter and Motor Drive Application s Unit: mm z 4-V gate drive z Low dr ain−source ON-resistance : RDS (ON) = 8 mΩ (typ.) z High forward transfe r admittance : |Yfs| = 60 S (typ.) z Low leakage current : IDSS = 100 μA ( max) (VDS = 60 V) z Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 2 5°C) Characteristics Symbol Rating Unit Drain−source voltage Drain− gate voltage (RGS = 20 kΩ) Gate−sou rce voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipatio n (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Rep etitive avalanche energy (Note 3) Chan nel temperature Storage temperature ra nge VDSS VDGR VGSS ID IDP PD EAS IAR E AR Tch Tstg 60 60 ±20 60 240 150 1054 60 15 150 −55 to 150 V V V A A W mJ A mJ °C °C JEDEC ― JEITA ― TOSHIBA 2-21F1B Weight: 9.75 g (typ.) Note: Using co.

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2SK2267
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2267
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Unit: mm
z 4-V gate drive
z Low drainsource ON-resistance
: RDS (ON) = 8 m(typ.)
z High forward transfer admittance
: |Yfs| = 60 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 60 V)
z Enhancement mode
: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
60
60
±20
60
240
150
1054
60
15
150
55 to 150
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (chc)
Rth (cha)
0.833
35.7
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 398 μH, RG = 25 , IAR = 60 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2009-12-09

                 






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