MMIC AMPLIFIER. SBB2089Z Datasheet


SBB2089Z AMPLIFIER. Datasheet pdf. Equivalent


SBB2089Z


CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER
SBB2089Z
50MHz to 850MHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER
Package: SOT-89

Product Description

RFMD’s SBB2089Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the SBB2089Z does not require a dropping resistor as compared to typical Darlington amplifiers. The SBB2089Z product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is internally matched to 50.

Optimum Technology Matching® Applied
GaAs HBT GaAs MESFET
 InGaP HBT
SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS

dB

Gain and Return Loss versus Frequency (w/ App. Ckt.)
30.0

20.0 10.0

S21

0.0

-10.0 -20.0

S11

-30.0 -40.0 S22

S11 S21 S22

-50.0

50.0 150.0 250.0 350.0 450.0 550.0 650.0 750.0 850.0
Frequency (MHz)

Features
 OIP3=42.8dBm at 240MHz  P1dB=20.8dBm at 500MHz  Single Fixed 5V Supply  Robust 2000V ESD, Class 2  Patented Thermal Design and
Bias Circuit  Low Thermal Resistance
Applications
 Receiver IF Amplifier  Cellular, PCS, GSM, UMTS  Wireless Data, Satellite Termi-
nals

Parameter

Specification Min. Typ. Max.

Unit

Condition

Small Signal Gain

20.0

dB 70MHz

18.5

20.0
...



SBB2089Z
SBB2089Z
50MHz to 850MHz, CASCADABLE
ACTIVE BIAS InGaP HBT MMIC AMPLIFIER
Package: SOT-89
Product Description
RFMD’s SBB2089Z is a high performance InGaP HBT MMIC amplifier uti-
lizing a Darlington configuration with an active bias network. The active
bias network provides stable current over temperature and process Beta
variations. Designed to run directly from a 5V supply, the SBB2089Z does
not require a dropping resistor as compared to typical Darlington amplifi-
ers. The SBB2089Z product is designed for high linearity 5V gain block
applications that require small size and minimal external components. It is
internally matched to 50.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Gain and Return Loss versus Frequency
(w/ App. Ckt.)
30.0
20.0
10.0
S21
0.0
-10.0
-20.0
S11
-30.0
-40.0 S22
S11
S21
S22
-50.0
50.0 150.0 250.0 350.0 450.0 550.0 650.0 750.0 850.0
Frequency (MHz)
Features
OIP3=42.8dBm at 240MHz
P1dB=20.8dBm at 500MHz
Single Fixed 5V Supply
Robust 2000V ESD, Class 2
Patented Thermal Design and
Bias Circuit
Low Thermal Resistance
Applications
Receiver IF Amplifier
Cellular, PCS, GSM, UMTS
Wireless Data, Satellite Termi-
nals
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
20.0
dB 70MHz
18.5
20.0
21.5 dB 240MHz
18.5
20.0
21.5 dB 400MHz
Output Power at 1dB Compression
20.0
dBm
70 MHz
20.0
dBm
240 MHz
18.5
21.0
dBm
400 MHz
Third Order Intercept Point
41.0
dBm
70 MHz
43.0
dBm
240 MHz
39.0
41.0
dBm
400 MHz
Return Loss
50 to 850
MHz Minimum 10dB
Input Return Loss
15.0
20.0
dB 70MHz to 5000MHz
Output Return Loss
11.0
14.0
dB 70MHz to 5000MHz
Noise Figure
2.7 3.7 dB 500MHz
Reverse Isolation
22.0
dB 70MHz to 5000MHz
Thermal Resistance
48.8
°C/W
junction - lead
Device Operating Voltage
5.0 5.3 V
Device Operating Current
82.0
90.0
98.0
mA
Test Conditions: VD=5V, ID=90mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, TL=25°C, ZS=ZL=50, Tested with Bias Tees
DS130718
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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SBB2089Z
SBB2089Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Device Current (ID)
Device Voltage (VD)
RF Input Power
110 mA
5.5 V
24 dBm
Junction Temp (TJ)
Operating Temp Range (TL)
Storage Temp
+150
-40 to +85
+150
°C
°C
°C
Power Dissipation
0.61
W
ESD Rating - Human Body Model
(HBM)
Class 2
Moisture Sensitivity Level
MSL2
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l and TL=TLEAD
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Typical RF Performance at Key Operating Frequencies (With Application Circuit)
Parameter
Unit 50MHz 70MHz 100 240 400
MHz MHz MHz
Small Signal Gain, S21
dB
20.0
20.0
20.0
20.0
20.0
Output Third Order Intercept Point, OIP3
dBm 40.0 40.0 41.0 42.0 41.0
Output Power at 1dB Compression, P1dB
dBm
20.0
20.0
20.0
20.0
20.0
Input Return Loss, IRL
dB
15.0
18.0
19.0
20.0
20.0
Output Return Loss, ORL
dB 21.0 23.0 24.0 27.0 34.0
Reverse Isolation, S12
dB
22.0
22.0
22.0
22.0
22.0
Noise Figure, NF
dB 3.1 2.9 2.7 2.6 2.7
Test Conditions: VCC=5V ID=90mA Typ. OIP3 Tone Spacing=1MHz, POUT per tone=0dBm TL=25°C ZS=ZL=50
Data on charts taken with Application Circuit
500
MHz
20.0
40.0
20.0
19.0
30.0
22.0
2.8
Noise Figure versus Frequency
P1dB versus Frequency
6.0 25.0
850
MHz
20.0
35.0
19.0
16.0
14.0
22.0
2.9
5.0
20.0
4.0
3.0 15.0
2.0
1.0
0.0
50.0
25C
-40C
85C
150.0 250.0 350.0 450.0 550.0 650.0 750.0 850.0
Frequency (MHz)
50.0
OIP3 versus Frequency
10.0
5.0
50.0
25C
-40C
85C
150.0 250.0 350.0 450.0 550.0 650.0 750.0 850.0
Frequency (MHz)
45.0
40.0
35.0
30.0
25.0
50.0
25C
-40C
85C
150.0 250.0 350.0 450.0 550.0 650.0 750.0 850.0
Frequency (MHz)
2 of 7
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS130718




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