BLOCK. SBB3089Z Datasheet

SBB3089Z BLOCK. Datasheet pdf. Equivalent


Part Number

SBB3089Z

Description

50MHz to 6000MHz InGaP HBT ACTIVE BIAS GAIN BLOCK

Manufacture

RFMD

Total Page 5 Pages
Datasheet
Download SBB3089Z Datasheet


SBB3089Z
SBB3089Z
50MHz to 6000MHz InGaP HBT ACTIVE BIAS
GAIN BLOCK
Package: SOT-89
Product Description
RFMD’s SBB3089Z is a high performance InGaP HBT MMIC amplifier uti-
lizing a Darlington configuration with an active bias network. The active
bias network provides stable current over temperature and process Beta
variations. The SBB3089Z product is designed for high linearity 5V gain
block applications that require excellent gain flatness, small size, and min-
imal external components. It is internally matched to 50.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Gain and Return Loss VS = 5V, IS = 42mA
30
S21
20
10
Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C
0
-10
-20
-30
0
S11
S22
1 234
Frequency (GHz)
5
6
Features
Single Fixed 5V Supply
PThaetermntaeldDSeeslfigBnias Circuit and
Gain=16.4dBm at 1950MHz
P1dB=15.2dBm at 1950MHz
OIP3=29.5dBm at 1950MHz
RHoBbMust 1000V ESD, Class 1C
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Wideband Instrumentation
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
15.1
16.6
18.1
dB 850MHz
14.9 16.4 17.9 dB 1950MHz
16.3 dB 2400MHz
Output Power at 1dB Compression
15.6
dBm 850MHz
14.2 15.2
dBm
1950 MHz
15.4
dBm
2400 MHz
Output Third Order Intercept Point
30.0
dBm 850MHz
27.5 29.5
dBm
1950 MHz
29.5
dBm
2400 MHz
Input Return Loss
16 21
dB 1950MHz
Output Return Loss
19 25.5
dB 1950MHz
Noise Figure
3.9 4.9 dB 1950MHz
Device Operating Voltage
Device Operating Current
4.2 4.3 V RDC=20, VS=5.0V
38 42 46 mA RDC=20, VS=5.0V
Operational Current Range
Thermal Resistance
30 46 mA Per user preference via RDC
80 °C/W Junction to lead
Test Conditions: VD=4.2V, ID=42mA, TL=25°C , OIP3 Tone Spacing=1MHz, RDC=20, Bias Tee Data, ZS=ZL=50, POUT per tone=-5dBm
DS130718
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 5

SBB3089Z
SBB3089Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (lD)
Max Device Voltage (VD)
Max RF Input Power* (See Note)
Max Junction Temperature (TJ)
Operating Temperature Range (TL)
Max Storage Temperature
ESD Rating - Human Body Model
(HBM)
Moisture Sensitivity Level
100
6
+20
+150
-40 to +85
+150
Class 1C
MSL 2
mA
V
dBm
°C
°C
°C
*Note: Load condition ZL=50
Operation of this device beyond any one of these limits may cause permanent
damage. For reliable continuous operation, the device voltage and current
must not exceed the maximum operating values specified in the table on
page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l and TL=TLEAD
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Typical RF Performance at Key Operating Frequencies (Bias Tee Data)
Parameter
Unit 100 500
MHz MHz
850
MHz
1950 2140 2400
MHz MHz MHz
Small Signal Gain
dB 16.9 16.6 16.6 16.4 16.4 16.3
Output Third Order Intercept Point
dBm 29.5
30.5
30.0
29.5
29.0
29.5
Output Power at 1dB Compression
dBm 15.6
16.0
15.6
15.2
15.0
15.4
Input Return Loss
dB 24.0 26.5 24.5 21.0 20.5 20.0
Output Return Loss
dB 21.5
26.0
26.0
25.5
25.5
27.5
Reverse Isolation
dB 19.5 19.0 19.5 19.5 19.5 19.5
Noise Figure
dB 3.7 3.9 3.9 3.9 3.9 4.0
Test Conditions: VD=4.2V ID=42mA OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm RDC=20TL=25°C ZS=ZL=50
Typical Performance with Bias Tees, VD=5V with RDC=20, ID=42mA
OIP3 versus Frequency,
(-5dBm/tone, 1MHz spacing)
34.0
P1dB versus Frequency
20.0
3500
MHz
16.1
27.0
15.2
15.5
21.0
19.5
3.8
32.0 18.0
30.0 16.0
28.0
26.0 25°C
-40°C
85°C
24.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)
14.0
12.0 25°C
-40°C
85°C
10.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)
2 of 5
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS130718


Features SBB3089Z 50MHz to 6000MHz InGaP HBT ACTI VE BIAS GAIN BLOCK Package: SOT-89 Pro duct Description RFMD’s SBB3089Z is a high performance InGaP HBT MMIC amplif ier utilizing a Darlington configuratio n with an active bias network. The acti ve bias network provides stable current over temperature and process Beta vari ations. The SBB3089Z product is designe d for high linearity 5V gain block appl ications that require excellent gain fl atness, small size, and minimal externa l components. It is internally matched to 50. Optimum Technology Matching Applied GaAs HBT GaAs MESFET  InGa P HBT SiGe BiCMOS Si BiCMOS SiGe HBT Ga As pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS dB Gain and Ret urn Loss VS = 5V, IS = 42mA 30 S21 20 10 Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C 0 -10 -20 -30 0 S11 S22 1 234 Frequency (GHz) 5 6 Features  Sin gle Fixed 5V Supply  PThaetermntaeld DSeeslfigBnias Circuit and  Gain=16. 4dBm at 1950MHz  P1dB=15.2dBm at 1950MHz  OIP3=29.5dBm at 1950MHz  RHoBbMust .
Keywords SBB3089Z, datasheet, pdf, RFMD, 50MHz, to, 6000MHz, InGaP, HBT, ACTIVE, BIAS, GAIN, BLOCK, BB3089Z, B3089Z, 3089Z, SBB3089, SBB308, SBB30, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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