SBB5089Z MMIC AMPLIFIER Datasheet

SBB5089Z Datasheet, PDF, Equivalent


Part Number

SBB5089Z

Description

CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER

Manufacture

RFMD

Total Page 10 Pages
Datasheet
Download SBB5089Z Datasheet


SBB5089Z
SBB5089Z
50MHz to 6000MHz, CASCADABLE
ACTIVE BIAS InGaP HBT MMIC AMPLIFIER
Package: SOT-89
Product Description
RFMD’s SBB5089Z is a high performance InGaP HBT MMIC amplifier uti-
lizing a Darlington configuration with an active bias network. The active
bias network provides stable current over temperature and process Beta
variations. Designed to run directly from a 5V supply, the SBB5089Z does
not require a dropping resistor as compared to typical Darlington amplifi-
ers. The SBB5089Z product is designed for high linearity 5V gain block
applications that require small size and minimal external components. It is
internally matched to 50.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain and Return Loss versus Frequency
(with BiasTees)
30.0
20.0
10.0
0.0
-10.0
-20.0
25C
-30.0
25C
-40.0
25C
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Frequency (GHz)
Features
Wideband Flat Gain to 4GHz:
±1.1 dB
P1dB=20.4dBm at 1950MHz
Single Fixed 5V Supply
Robust 1000V ESD, Class 1C
Patented Thermal Design and
Bias Circuit
Low Thermal Resistance
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
Wideband Intrumentation
Wireless Data, Satellite Termi-
nals
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
19.0
20.5
22.0
dB 850MHz
18.5
20.0
21.5 dB 1950MHz
14.5
16.0
17.5 dB 6000MHz
Output Power at 1dB Compression
20.5
dBm
850 MHz
19.0
20.5
dBm
1950 MHz
Third Order Intercept Point
38.5
dBm
850 MHz
33.0
35.0
dBm
1950 MHz
Bandwidth
3000
MHz Min. 10dB return loss (typ.)
Input Return Loss
10.0
14.0
dB 1950MHz
Output Return Loss
10.0
14.0
dB 1950MHz
Reverse Isolation
23.3
dB 1950MHz
Noise Figure
4.2 4.9 dB 1950MHz
Device Operating Voltage
5.0
5.25
V
Device Operating Current
65.0
75.0
92.0
mA
Thermal Resistance
69.9
°C/W
junction - lead
Test Conditions: VD=5V, ID=75mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-dBm, TL=25°C, ZS=ZL=50Tested with Bias Tees
DS130718
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 10

SBB5089Z
SBB5089Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Device Current (ID)
100 mA
Max Device Voltage (VD)
5.5 V
Max RF Input Power
24 dBm
Max Operating Dissipated Power
0.55
W
Junction Temp (TJ)
+150
°C
Operating Temp Range (TL)
-40 to +85
°C
Storage Temp Range
-40 to +150
°C
ESD Rating - Human Body Model (HBM)
Class 1C
Moisture Sensitivity Level
MSL2
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l and TL=TLEAD
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Typical Performance at Key Operating Frequencies (0.5GHz to 3.5GHz Application Circuit)
Parameter
Specification
Min. Typ. Max.
Unit
Small Signal Gain
21.1 dB 50MHz
20.9
dB 100MHz
20.8
dB 200MHz
20.8
dB 500MHz
20.8
dB 850MHz
20.1
dB 1950MHz
19.8
dB 2500MHz
18.7
dB 3500MHz
17.8 dB 4000MHz
Output Third Order Intercept Point
36
dBm
50 MHz
37.8
dBm
100 MHz
37.5
dBm
200 MHz
38.6
dBm
500 MHz
39.2
dBm
850 MHz
34.9
dBm
1950 MHz
32.8
dBm
2500 MHz
29.4
dBm
3500 MHz
26.8
dBm
4000 MHz
Output Power at 1dB Compression
19.4
dBm
50 MHz
19.7
dBm
100 MHz
20
dBm
200 MHz
20.5
dBm
500 MHz
20.4
dBm
850 MHz
20.4
dBm
1950 MHz
19.4
dBm
2500 MHz
16.9
dBm
3500 MHz
14.7
dBm
4000 MHz
Condition
2 of 10
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS130718


Features SBB5089Z 50MHz to 6000MHz, CASCADABLE AC TIVE BIAS InGaP HBT MMIC AMPLIFIER Pack age: SOT-89 Product Description RFMD s SBB5089Z is a high performance InGaP HBT MMIC amplifier utilizing a Darling ton configuration with an active bias n etwork. The active bias network provide s stable current over temperature and p rocess Beta variations. Designed to run directly from a 5V supply, the SBB5089 Z does not require a dropping resistor as compared to typical Darlington ampli fiers. The SBB5089Z product is designed for high linearity 5V gain block appli cations that require small size and min imal external components. It is interna lly matched to 50. Optimum Technolo gy Matching® Applied GaAs HBT GaAs MES FET  InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Gain and Return Loss (dB ) Gain and Return Loss versus Frequenc y (with BiasTees) 30.0 20.0 10.0 0.0 -10.0 -20.0 25C -30.0 25C -40.0 25C 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Frequency (GHz) Features  Wideban.
Keywords SBB5089Z, datasheet, pdf, RFMD, CASCADABLE, ACTIVE, BIAS, InGaP, HBT, MMIC, AMPLIFIER, BB5089Z, B5089Z, 5089Z, SBB5089, SBB508, SBB50, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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