SGA4563Z MMIC AMPLIFIER Datasheet

SGA4563Z Datasheet, PDF, Equivalent


Part Number

SGA4563Z

Description

CASCADABLE SiGe HBT MMIC AMPLIFIER

Manufacture

RFMD

Total Page 6 Pages
Datasheet
Download SGA4563Z Datasheet


SGA4563Z
SGA4563ZSGA4563Z
DC to 2500MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Package: SOT-363
Product Description
The SGA4563Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high FT and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain & Return Loss vs. Frequency
32
GAIN
VD= 3.5 V, ID= 45 mA (Typ.)
24
ORL
16
IRL
8
0
012345
Frequency (GHz)
0
-10
-20
-30
-40
6
Features
High Gain: 20.2dB at
1950 MHz
Cascadable 50
Operates from Single Supply
Low Thermal Resistance
Package
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
25.6
dB 850MHz
20.2
dB 1950MHz
18.6
dB 2400MHz
Output Power at 1dB Compression
15.0
dBm 850MHz
12.8
dBm
1950 MHz
Output Third Intercept Point
27.1
dBm
850 MHz
26.2
dBm
1950 MHz
Bandwidth Determined by Return
Loss
2500
MHz >10dB
Input Return Loss
19.9
dB 1950MHz
Output Return Loss
10.1 dB 1950MHz
Noise Figure
2.4 dB 1950MHz
Device Operating Voltage
3.6 V
Device Operating Current
40 45 49 mA
Thermal Resistance
(Junction - Lead)
255 °C/W
Test Conditions: VS=8V, ID=45mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-10dBm, RBIAS=100, TL=25°C, ZS=ZL=50
DS140121
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6

SGA4563Z
SGA4563Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (ID)
Max Device Voltage (VD)
Max RF Input Power
90 mA
6V
+18 dBm
Max Junction Temp (TJ)
Operating Temp Range (TL)
Max Storage Temp
+150
-40 to +85
+150
°C
°C
°C
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Typical Performance at Key Operating Frequencies
Parameter
Unit 100 500 850 1950 2400
MHz MHz MHz MHz MHz
Small Signal Gain
dB 28.7 27.4 25.6 20.2 18.6
Output Third Order Intercept Point
dBm 27.0 26.2 27.1 26.2 25.3
Output Power at 1dB Compression
dBm 15.7 15.0 15.0 12.8 11.6
Input Return Loss
dB 19.2 20.7 24.5 19.9 16.5
Output Return Loss
dB 20.0 17.7 15.0 10.1 9.3
Reverse Isolation
dB 30.5 29.7 28.7 24.5 23.0
Noise Figure
dB 1.9 1.9 1.9 2.4
Test Conditions: VS=8V, ID=45mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-10dBm, RBIAS=100, TL=25°C, ZS=ZL=50
Noise Figure vs. Frequency
VD= 3.2 V, ID= 45 mA (Typ.)
5
4
3 TL=+25ºC
2
1
0
0
0.5
1 1.5 2
Frequency (GHz)
TL=+25ºC
2.5
3
3500
MHz
15.3
12.4
9.3
19.9
Noise Figure vs. Frequency
VD= 3.2 V, ID= 45 mA (Typ.)
5
4
3 TL=+25ºC
2
1
0 TL=+25ºC
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS140121


Features SGA4563ZSGA4563Z DC to 2500MHz, CASCADAB LE SiGe HBT MMIC AMPLIFIER Package: SOT -363 Product Description The SGA4563Z is a high performance SiGe HBT MMIC Amp lifier. A Darlington configuration feat uring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current b etween junctions. Cancellation of emitt er junction non-linearities results in higher suppression of intermodulation p roducts. Only two DC-blocking capacitor s, a bias resistor, and an optional RF choke are required for operation. Gain (dB) Return Loss (dB) Optimum Technol ogy Matching® Applied GaAs HBT GaAs ME SFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT Ga N HEMT RF MEMS Gain & Return Loss vs. Frequency 32 GAIN VD= 3.5 V, ID= 45 m A (Typ.) 24 ORL 16 IRL 8 0 012345 Fre quency (GHz) 0 -10 -20 -30 -40 6 Feat ures  High Gain: 20.2dB at 1950 MHz  Cascadable 50  Operates from Single Supply  Low Thermal Resista.
Keywords SGA4563Z, datasheet, pdf, RFMD, CASCADABLE, SiGe, HBT, MMIC, AMPLIFIER, GA4563Z, A4563Z, 4563Z, SGA4563, SGA456, SGA45, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)