GAIN BLOCK. SGA7489Z Datasheet


SGA7489Z BLOCK. Datasheet pdf. Equivalent


Part Number

SGA7489Z

Description

DC to 3000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK

Manufacture

RFMD

Total Page 6 Pages
Datasheet
Download SGA7489Z Datasheet


SGA7489Z
SGA7489ZDC
to 3000MHz
Silicon Germa-
nium HBT Cas-
cadable Gain
Block
SGA7489Z
DC to 3000MHz SILICON GERMANIUM HBT
CASCADABLE GAIN BLOCK
Package: SOT-89
Product Description
The SGA7489Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high FT and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Gain, Return Loss, and Isolation vs. Frequency
VD=5.0V, ID=115mA (Typ), TLEAD=+25C
30
25
Gain
20 Input Return
Loss
15
10
Output
Return Loss
5
Isolation
0
0 500
1000
1500
2000
Frequency (MHz)
2500
0
-5
-10
-15
-20
-25
-30
3000
Features
DC to 3000MHz Operation
Very High IF Output IP3:
39dBm at 100MHz
High Output IP3: +35.5dBm
typ. at 850MHz
Low Noise Figure: 3.3dB typ.
at 1950MHz
Applications
Oscillator Amplifiers
PA for Low/Medium Power
Applications
IF/RF Buffer Amplifier
Drivers for CATV Amplifiers
LO Driver Amplifier
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
20.0
21.5
23.0
dB 850MHz
17.0
18.5
20.0
dB 1950MHz
Output Power at 1dB Compression
22.4
dBm
850 MHz
18.5
20.0
dBm
1950 MHz
Output Third Intercept Point
39.0
dBm
100 MHz
35.5
dBm
850 MHz
31.0
33.0
dBm
1950 MHz
36.0*
dBm
1950MHz, Using 2GHz App. Ckt.
Bandwidth Determined by Return
Loss
3000
MHz >9dB
Input Return Loss
10.3
15.0
dB 1950MHz
Output Return Loss
9.0 11.0
dB 1950MHz
Noise Figure
Reverse Isolation
3.3
23.0
4.3 dB 1950MHz, ZS=50Ω
dB 1950MHz
Device Operating Voltage
4.7 5.0 5.3 V
Device Operating Current
103 115 127 mA
Thermal Resistance
(Junction - Lead)
82 °C/W
Test Conditions: VS=8V, ID=115mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS=26Ω, TL=25°C, ZS=ZL=50Ω
DS100915
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6

SGA7489Z
SGA7489Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (ID)
Max Device Voltage (VD)
Max RF Input Power, ZL=50Ω
Max RF Input Power, Load
VSWR = 10:1*
170 mA
7V
+16 dBm
+2 dBm
Max Junction Temp (TJ)
Operating Temp Range (TL)
Max Storage Temp
+150
-40 to +85
+150
°C
°C
°C
Moisture Sensitivity Level
MSL 2
*Note: Take into account out of band load VSWR presented by devices such as SAW
filters to determine maximum RF input power. Reflected harmonic levels in satu-
ration are significant.
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Typical Performance at Key Operating Frequencies
Parameter
Unit 100 500 850 1950
MHz MHz MHz MHz
Small Signal Gain
dB
23.0
22.5
21.5
18.5
Output Third Order Intercept Point
dBm
39.0
36.5
35.5
33.0*
Output Power at 1dB Compression
dBm 22.8 22.6 22.4 20.0
Input Return Loss
dB 13.5 14.5 15.5 15.0
Output Return Loss
dB 19.5 17.0 14.5 11.0
Reverse Isolation
dB
26.0
25.5
25.0
23.0
Noise figure
dB 2.7 2.7 2.8 3.3
Test Conditions: VS=8V, ID=115mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, Bias Resistance=26Ω, TL=25°C, ZS=ZL=50Ω
*Note: An OIP3 of +36dBm at 1950MHz is achieved using the tuned circuit
2400
MHz
17.0
32.2
19.0
13.5
10.5
22.0
40.0
38.0
36.0
34.0
32.0
30.0
28.0
26.0
0
OIP3 vs. Frequency over Temperature
VD=5.0V, ID=115 mA (Typ.) at TLEAD=+25°C
T
LEAD
-40C
+25C
+85C
+25C Tuned Circuit
500
1000
1500
2000
2500
Frequency (MHz)
26.0
24.0
22.0
20.0
18.0
16.0
14.0
12.0
0
P1dB vs. Frequency over Temperature
VD=5.0V, ID=115 mA (Typ.) at TLEAD=+25°C
TLEAD
-40C
+25C
+85C
500
1000
1500
2000
2500
Frequency (MHz)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0
Noise Figure vs. Frequency over Temperature
VD=5.0V, ID=115 mA (Typ.) at TLEAD=+25°C
T
LEAD
500
1000
1500
Frequency (MHz)
-40C
+25C
+85C
2000
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS100915


Features SGA7489ZDC to 3000MHz Silicon Germanium HBT Cascadable Gain Block SGA7489Z DC to 3000MHz SILICON GERMANIUM HBT CASCA DABLE GAIN BLOCK Package: SOT-89 Prod uct Description The SGA7489Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one- micron emitters provides high FT and ex cellent thermal performance. The hetero junction increases breakdown voltage an d minimizes leakage current between jun ctions. Cancellation of emitter junctio n non-linearities results in higher sup pression of intermodulation products. O nly two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Gain (dB) Retu rn Loss & Isolation (dB) Optimum Techn ology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS  SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS Gain, R eturn Loss, and Isolation vs. Frequency VD=5.0V, ID=115mA (Typ), TLEAD=+25C 30 25 Gain 20 Input Return Loss 15 10 Output Return Loss 5 Isola.
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