MMIC AMPLIFIER. SGA4463Z Datasheet


SGA4463Z AMPLIFIER. Datasheet pdf. Equivalent


Part Number

SGA4463Z

Description

CASCADABLE SiGe HBT MMIC AMPLIFIER

Manufacture

RFMD

Total Page 6 Pages
Datasheet
Download SGA4463Z Datasheet


SGA4463Z
SGA4463ZDC
to 3500MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
SGA4463Z
DC to 3500MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Package: SOT-363
Product Description
The SGA4463Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high FT and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Gain & Return Loss vs. Frequency
24 VD= 3.2 V, ID= 45 mA (Typ.)
GAIN
18
ORL
12
IRL
6
0
012345
Frequency (GHz)
0
-10
-20
-30
-40
6
Features
High Gain: 17dB at 1950MHz
Cascadable 50
Operates from Single Supply
Low Thermal Resistance
Package
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
17.5 19.0 21.0 dB 850MHz
17.0 dB 1950MHz
16.0
dB 2400MHz
Output Power at 1dB Compression
14.0
dBm
850 MHz
12.3
dBm
1950 MHz
Output Third Intercept Point
27.0
dBm
850 MHz
24.8
dBm
1950 MHz
Bandwidth Determined by Return
Loss
3500
MHz >9dB
Input Return Loss
24.4 dB 1950MHz
Output Return Loss
12.8
dB 1950MHz
Noise Figure
2.8 dB 1950MHz
Device Operating Voltage
2.9 3.2 3.5 V
Device Operating Current
41 45 49 mA
Thermal Resistance
(Junction - Lead)
255 °C/W
Test Conditions: VS=8V, ID=45mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, RBIAS=110, TL=25°C, ZS=ZL=50
DS111011
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6

SGA4463Z
SGA4463Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (ID)
Max Device Voltage (VD)
Max RF Input Power
90 mA
5V
+18 dBm
Max Junction Temp (TJ)
Operating Temp Range (TL)
Max Storage Temp
+150
-40 to +85
+150
°C
°C
°C
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Typical Performance at Key Operating Frequencies
Parameter
Unit 100 500 850 1950 2400
MHz MHz MHz MHz MHz
Small Signal Gain
dB 20.2 19.8 19.0 17.0 16.0
Output Third Order Intercept Point
dBm
27.8 27.0 24.8
Output Power at 1dB Compression
dBm
14.0 14.0 12.3
Input Return Loss
dB 22.5 19.5 19.9 24.4 21.1
Output Return Loss
dB 22.8 21.7 18.4 12.8 11.9
Reverse Isolation
dB
23.4
22.8
23.0
22.2
21.7
Noise Figure
dB 2.6 2.5 2.8
Test Conditions: VS=8V, ID=45mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, RBIAS=110, TL=25°C, ZS=ZL=50
3500
MHz
13.7
16.5
10.5
19.8
OIP3 vs. Frequency
VD=3.2 V, ID= 45 mA (Typ.)
35
30 TL
P1dB vs. Frequency
VD= 3.2 V, ID= 45 mA (Typ.)
18
15
25 12
20
TL=+25ºC
15
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
9
TL=+25ºC
6
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
Noise Figure vs. Frequency
VD= 3.2 V, ID= 45 mA (Typ.)
5
4
3 TL=+25ºC
2
1
TL=+25ºC
0
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS111011


Features SGA4463ZDC to 3500MHz, Cascadable SiGe H BT MMIC Amplifier SGA4463Z DC to 3500 MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-363 Product Description The SGA4463Z is a high performance SiG e HBT MMIC Amplifier. A Darlington conf iguration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increa ses breakdown voltage and minimizes lea kage current between junctions. Cancell ation of emitter junction non-lineariti es results in higher suppression of int ermodulation products. Only two DC-bloc king capacitors, a bias resistor, and a n optional RF choke are required for op eration. Gain (dB) Return Loss (dB) O ptimum Technology Matching® Applied Ga As HBT GaAs MESFET InGaP HBT SiGe BiCMO S Si BiCMOS  SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LD MOS Gain & Return Loss vs. Frequency 2 4 VD= 3.2 V, ID= 45 mA (Typ.) GAIN 18 O RL 12 IRL 6 0 012345 Frequency (GHz) 0 -10 -20 -30 -40 6 Features  High Gain: 17dB at 1950MHz  Cascad.
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